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The simulation method of mos device

A technology of MOS devices and simulation methods, applied in design optimization/simulation, special data processing applications, CAD circuit design, etc., can solve the problem that the fixed shape method cannot satisfy the designer, and achieve the effect of improving applicability

Active Publication Date: 2020-12-18
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

[0006] However, in practical applications, the designer needs to carry out redundant design for a larger or smaller range according to the characteristics of his own design, but the way of fixing the shape of the existing technology cannot meet the needs of the designer

Method used

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  • The simulation method of mos device
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Embodiment Construction

[0021]As mentioned in the background art, in practical applications, designers need to perform redundant designs on larger or smaller areas according to their own design characteristics, but the fixed shape method in the prior art cannot meet the needs of designers.

[0022]The technical solution of the present invention adjusts at least a part of the multiple characteristic parameters through configurable coefficients, thereby realizing the accuracy of describing the slow NMOS fast PMOS process angle and the fast NMOS slow PMOS process angle by the first corner model, thereby improving Applicability of MOS device corner model.

[0023]In order to make the above-mentioned objects, features and advantages of the present invention more obvious and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0024]figure 2 It is a flowchart of a MOS device simulation method according to an embodiment of the presen...

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Abstract

A MOS device stimulation method comprises the following steps that a corner model of the MOS device is provided, and the corner model of the MOS device comprises a first corner model which is used for describing a slow-NMOS fast-PMOS process corner and a fast-NMOS slow-PMOS process corner. The first corner model comprises multiple characteristic parameters, further comprises configurable coefficients which regulate at least a part of the multiple characteristic parameters; configuration of the configurable coefficients is determined; based on the configured configurable coefficients, the stimulation is made by utilizing the MOS device corner model. According to the technical scheme, the adaptability of the MOS device corner model is improved.

Description

Technical field[0001]The invention relates to the field of semiconductor design simulation, and a simulation method of MOS devices.Background technique[0002]Unlike bipolar transistors, the parameters of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) vary greatly between different wafers and between different batches. In order to reduce the difficulty of circuit design tasks to a certain extent, process engineers must ensure that the performance of the device is within a certain standard range, strictly control the process, and make the process parameters change within a certain range. At the same time, the wafers beyond this performance range are scrapped to ensure that the device performance indicators meet the requirements.[0003]The performance range of MOS transistors usually provided to designers is given in the form of "Process Comer" and corner models, such asfigure 1 As shown,figure 1 It is a schematic diagram of a corner model for threshold voltage in the prior a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F30/39
CPCG06F30/20
Inventor 张昊
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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