Method for manufacturing array substrate, array substrate and display device
A manufacturing method and array substrate technology, which are applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., and can solve problems such as corrosion and leakage of metal layers.
Active Publication Date: 2020-02-18
BOE TECH GRP CO LTD +1
View PDF3 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004] Embodiments of the present invention provide a method for fabricating an array substrate, an array substrate, and a display device to solve the problem in the prior art that the source and drain metal layers are corroded by reactive gases during channel etching
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0031] Aiming at the problem in the prior art that the reactive gas corrodes the metal layer of the source and drain during channel etching, the embodiments of the present invention provide a method for manufacturing an array substrate, an array substrate and a display device.
[0032] The method for fabricating the array substrate, the implementation of the array substrate and the display device provided by the embodiments of the present invention will be described in detail below with reference to the accompanying drawings. The thickness and shape of each film layer in the drawings do not reflect the real scale, and the purpose is only to illustrate the content of the present invention.
[0033] like figure 2 As shown, the embodiment of the present invention provides a method for manufacturing an array substrate, including:
[0034] S201, forming an active layer and a semiconductor layer having the same pattern on the base substrate;
[0035] S202, forming a pattern of a ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses an array-substrate preparation method, an array substrate and a display device. The array-substrate preparation method includes the steps that an active layer and a semiconductor layer which have the same figure are formed on a substrate; a figure of a source-drain metal layer is formed on the semiconductor layer; a protection layer located on a side face above the graph of the active layer is formed, wherein the protection layer is used for covering at least the source-drain metal layer; etching is conducted on the semiconductor layer, and a channel region of a thin film transistor is formed; the protection layer is removed. According to the array-substrate preparation method, after the graph of the source-drain metal layer is formed, the protection which is used for covering at least the source-drain metal layer and located on the side face above the graph of the active layer is formed, so that the source-drain metal layer is not corroded when the etching is conducted on the semiconductor layer. Meanwhile, after the channel region is formed, the protection layer is removed, so that the structure of the thin film transistor is not changed.
Description
technical field [0001] The invention relates to the field of display technology, in particular to a manufacturing method of an array substrate, an array substrate and a display device. Background technique [0002] Advanced-Super Dimension Switch technology (Advanced-Super Dimension Switch, ADS) forms a multi-dimensional electric field through the parallel electric field generated by the edge of the pixel electrode in the same plane and the vertical electric field generated between the pixel electrode and the common electrode layer, so that the pixel electrodes in the liquid crystal cell All oriented liquid crystal molecules directly above the electrodes can be rotated, thereby improving the working efficiency of the liquid crystal and increasing the light transmission efficiency. ADS technology can improve the picture quality of TFT-LCD products, and has the advantages of high resolution, high transmittance, low power consumption, wide viewing angle, high aperture ratio, lo...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/84H01L27/12
CPCH01L27/1214H01L27/1259
Inventor 苏磊代科杨小飞
Owner BOE TECH GRP CO LTD