Manufacturing method of groove-type super junction
A manufacturing method and super junction technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of smaller conductive paths and reduced concentration of PN junction regions, and achieve the effect of improving device performance
Inactive Publication Date: 2017-06-13
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF3 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
It can be seen that due to the PN Counter Dope, the original conductive path of the N-type doped region not only becomes smaller, but also the concentration of the region close to the PN junction decreases seriously, which has a very adverse effect on the forward conduction resistance.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0048] Such as image 3 Shown is the flow chart of the method of the embodiment of the present invention; Figure 4A to Figure 4E Shown is a schematic diagram of the device structure in each step of the method of the embodiment of the present invention; the method for manufacturing a trench-type super junction in the embodiment of the present invention includes the following steps:
[0049] Step 1, such as Figure 4A As shown, a semiconductor substrate 1 is provided, and a first N-type epitaxial layer 2 is formed on the surface of the semiconductor substrate 1 .
[0050] Preferably, the thickness of the first N-type epitaxial layer 2 is 15 microns to 60 microns. The semiconductor substrate 1 is a silicon substrate, the first N-type epitaxial layer 2 is an N-type silicon epitaxial layer, and the P-type epitaxial layer 6 is a P-type silicon epitaxial layer.
[0051] Step two, such as Figure 4B As shown, a plurality of trenches 4 are formed in the first N-type epitaxial laye...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
The invention discloses a manufacturing method of a groove-type super junction. The method comprises the following steps: step I, providing a semiconductor substrate with a first type-N epitaxial layer formed on the surface; step II, forming a plurality of grooves in the first type-N epitaxial layer; step III, forming a second type-N epitaxial layer on the bottom surface and the side surface of each groove; step IV, filling each groove with a type-P epitaxial layer; and step V, performing a chemical and mechanical grinding process to remove the type-P epitaxial layer outside the groove to form a super junction. By adopting the manufacturing method, an effective width of a conductive channel of a type-N thin layer can be increased, so that the positive conduction resistance of a device can be decreased; and meanwhile, the breakdown voltage of the device cannot be influenced, the performance of the device can be improved, and the process development pressure can be alleviated.
Description
technical field [0001] The invention relates to a manufacturing process method of a semiconductor integrated circuit, in particular to a manufacturing method of a trench type super junction. Background technique [0002] The super junction is composed of alternately arranged P-type thin layers (P-Pillar) and N-type thin layers (N-Pillar) formed in the semiconductor substrate. The existing super junction The manufacturing method includes the manufacturing method of the trench type super junction. This method is to manufacture the super junction device through the trench process. It is necessary to etch a certain depth and width of the trench, and then use epitaxial filling (ERIFilling) to fill the etched trench with P-type doped silicon epitaxy, and the filled region is required to have a complete crystal structure, so that high-performance devices can be produced in subsequent processes. [0003] Fabrication of super junction devices using deep trenches and epitaxial fillin...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06
CPCH01L29/0634
Inventor 李昊
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP