Semiconductor Laminate And Method For Manufacturing Same, Method For Manufacturing Semiconductor Device, Semiconductor Device, Dopant Composition, Dopant Injection Layer, And Method For Forming Doped Layer
A technology of dopant and composition, applied in the fields of forming doped layers and manufacturing semiconductor devices, can solve the problems of high cost and the like
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment A1-1
[0386] Obtained in embodiment A1 with figure 1 (d1) The laminated body of the structure shown. That is, in Example A1, a laminate in which the sintered silicon particle layer and the light-transmitting layer were laminated on the substrate was obtained.
[0387] (Preparation of silicon particle dispersion)
[0388] Silicon particles are SiH 4 gas as raw material, by using CO 2 Laser pyrolysis (LP) method of production. The average primary particle diameter of the obtained silicon particles was about 7 nm. The silicon particles were ultrasonically dispersed in isopropyl alcohol (IPA) to obtain a silicon particle dispersion having a solid content concentration of 3% by mass.
[0389] The average primary particle size of silicon particles was observed by TEM, image analysis was performed at a magnification of 100,000 times, and calculation was performed based on a set of 500 or more.
[0390] (preparation of substrate)
[0391] The glass substrates were ult...
Embodiment A1-2 to A1-4
[0404] In Examples A1-2 to A1-4, the laser irradiation energy is respectively 100mJ / (cm 2 • times), 200mJ / (cm 2 • times) and 300mJ / (cm 2 • times) Except for this, the sintered silicon particle layer was produced in the same manner as in Example A1-1.
[0405] The laminate obtained in Example A1-2 has the following properties: figure 1 The structure shown in (d1) is a structure in which the sintered silicon particle layer (A5) and the light-transmitting layer (A3) were laminated|stacked on the base material (A10). In addition, the laminates obtained in Examples A1-3 and 1-4 had figure 1 The configuration shown in (d2) is a configuration in which only the sintered silicon particle layer (A5) is laminated on the base material (A10).
[0406] The laminates obtained in Examples A1-2 to A1-4 were evaluated by cross-sectional observation of the silicon layer in the same manner as in Example A1-1. The FE-SEM photographs of the laminate obtained from embodiment A1-2 t...
Embodiment A2-1 to A2-4
[0408] In Examples A2-1 to A2-4, a light-transmitting layer (see below) mainly composed of silicon oxide obtained from a silanol solution was used as the light-transmitting layer. Likewise, a layer of sintered silicon particles was produced. In Examples A2-1 to A2-4, the laser irradiation energy is 100mJ / (cm 2 • times), 200mJ / (cm 2 • times), 300mJ / (cm 2 • times) and 400mJ / (cm 2 •Second-rate).
[0409] The laminates obtained in Examples A2-1 and A2-2 have the following properties: figure 1 The configuration shown in (d1) is a configuration in which the sintered silicon particle layer (A5) and the light-transmitting layer (A3) are laminated on the substrate (A10). The laminates obtained from Examples A2-3 and A2-4 have figure 1 The configuration shown in (d2) is a configuration in which only the sintered silicon particle layer (A5) is laminated on the base material (A10).
[0410] The laminates obtained in Examples A2-1 to A2-4 were evaluated by cross-sectio...
PUM
| Property | Measurement | Unit |
|---|---|---|
| particle size | aaaaa | aaaaa |
| electrical resistivity | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More