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Method for manufacturing monocrystalline silicon

A manufacturing method and technology of single crystal silicon, which are applied in the directions of single crystal growth, chemical instruments and methods, crystal growth, etc., can solve the problem of inability to obtain single crystal ingots and the same wafer product.

Inactive Publication Date: 2017-06-30
SUMCO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there is currently a problem that the wafer product for a specific customer obtained from one single crystal ingot without loss is partially out of specification, and the entire single crystal ingot cannot be obtained as the same wafer product

Method used

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  • Method for manufacturing monocrystalline silicon
  • Method for manufacturing monocrystalline silicon
  • Method for manufacturing monocrystalline silicon

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Experimental program
Comparison scheme
Effect test

Embodiment

[0057] Before the growth of single crystal silicon, the first product area is set to the range between 200mm from the straight cylindrical part of the single crystal (referring to 200mm from the beginning of the straight cylindrical part, the same applies hereinafter) to 800mm, and the second product area is set to the single crystal A single crystal silicon ingot with a diameter of 300 mm and a crystal length of 2000 mm doped with nitrogen was grown by the CZ method in the range of 800 mm to 2000 mm in the straight cylindrical part of the crystal. In this case, the rotation speed of the quartz crucible and the power of the heater were changed halfway after the position 800 mm from the upper part of the single crystal silicon ingot so that the oxygen concentration in the single crystal was higher than before, and the single crystal was carried out. lift.

[0058] Next, a single crystal silicon ingot was processed to produce multiple polished wafers. At the same time, as a samp...

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Abstract

A product area with multiple BMD density ranges is obtained from a single crystal ingot. The invention provides a method of pulling monocrystalline silicon from a silicon-doped silicon melt, and the method includes growing a first product region (3c1) on the upper side of the monocrystalline silicon and a second product region (3c2) different from the first product region (3c1) on the lower side of the monocrystalline silicon and having a manufacturing density of BMD density compared with the first product region (3c1). The upper limit and the lower limit of the manufacturing specifications of the BMD density in the second product region (3c2) are larger than the upper and lower limits of the manufacturing specifications of the BMD density in the first product region (3c1), respectively. In the growth of the first product region (3c1), the oxygen concentration in the monocrystalline silicon is controlled within the range of the manufacturing specification of the BMD density in the first product region (3c1), and in the growth of the second product region (3c2), the oxygen concentration in the single crystal silicon is controlled within the range of the manufacturing specification of the BMD density in the second product region (3c2).

Description

technical field [0001] The present invention relates to a method for manufacturing silicon single crystals by the Czochralski method (hereinafter referred to as the CZ method), and more particularly to a method for manufacturing silicon single crystals doped with nitrogen. Background technique [0002] Epitaxial silicon wafers are widely used as substrate materials for semiconductor devices. Epitaxial silicon wafers are obtained by vapor growth of single crystal silicon thin films on bulk silicon wafers (Bulk Silicon Wafer) (polished wafers), and have the characteristics of high crystallization integrity. [0003] Heavy metal impurities in epitaxial silicon wafers need to be reduced as much as possible because they cause poor characteristics of semiconductor devices. As a technique for reducing the influence of heavy metal impurities, an intrinsic gettering method (IG) is known in which oxygen precipitates (BMD: Bulk Micro Defect, Bulk Micro Defect) are formed in a silicon ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/36C30B29/06
CPCC30B15/36C30B29/06
Inventor 江头和幸齐藤正夫
Owner SUMCO CORP