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Method and system for prolonging service cycle of TLC Nand flash memory

A flash memory, one block technology, applied in a method of increasing the life cycle of TLCNand flash memory and its system field, can solve the problem of limited erasing and writing times, and achieve the effect of increasing the life cycle and reducing costs

Inactive Publication Date: 2017-06-30
BIWIN STORAGE TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

TLC (Triple-LevelCell) flash memory is a kind of Nand flash memory that is widely used in the market at present. TLC uses charges of different potentials, and a floating gate stores 3 bytes of information, with a lifespan of about 500-1000 times. For TLC flash memory For example, due to its limited number of times of erasing and writing, frequent writing of large amounts of data is unbearable for TLC flash memory

Method used

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  • Method and system for prolonging service cycle of TLC Nand flash memory
  • Method and system for prolonging service cycle of TLC Nand flash memory
  • Method and system for prolonging service cycle of TLC Nand flash memory

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Embodiment 1

[0053] Please refer to figure 2 , Embodiment 1 of the present invention is: a method for increasing the service life of TLC Nand flash memory, which can not only prolong the service life of TLC Nand flash memory, but also greatly reduce the production cost of digital products. include:

[0054] S1. Determine whether there is a bad block in the block of the TLC Nand flash memory, and if so, execute step S2. Since the process of Nand flash memory cannot guarantee the reliable performance of Nand Memory Array during its life cycle, Nand flash memory will generate bad blocks during production and use. Bad blocks generated during production become inherent bad blocks, and bad blocks generated during use become used bad blocks. If an error occurs when programming a certain Page of the first block, this block should be marked as a bad block. First, the contents of the pages of other numbers must be backed up to another empty good block, and then, Mark this block as a bad block. O...

Embodiment 2

[0063] Please refer to Figure 4 , embodiment two of the present invention is corresponding to the method in embodiment one, is a kind of system that increases the life cycle of TLC Nand flash memory, comprising:

[0064] Judging module 1, for judging whether there is bad block in the block of TLC Nand flash memory; Described judging module comprises: reading unit 11, is used for if erase operation is carried out to one piece in the block of TLC Nand flash memory, then reads all The error correction code of one block; Judgment unit 12, is used to judge whether described error correction code meets the preset condition that error correction can be carried out; Judgment unit 13, is used for if not, then judges that described one is bad block;

[0065] Setting module 2 is used to set the bad block to SLC storage mode if so.

[0066] Create module 3 for creating bad block table;

[0067] The adding module 4 is used to add the bad block to the bad block table.

[0068] Create a ...

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Abstract

The invention discloses a method and system for prolonging the service cycle of a TLC (Triple-Level Cell) Nand flash memory. The method comprises: judging whether blocks of the TLC Nand flash memory have a bad block; and if the blocks of the TLC Nand flash memory have a bad block, setting the bad block to be an SLC (Single-Level Cell) storage mode. Because the erase-write lifetime of an SLC flash memory is longer than that of a TLC flash memory, the service life of the TLC Nand flash memory can be prolonged by setting the bad block in the TLC Nand flash memory as the SLC storage mode, and the production cost of a digital product is reduced.

Description

technical field [0001] The invention relates to the technical field of data storage, in particular to a method for increasing the service life of a TLC Nand flash memory and a system thereof. Background technique [0002] As a low-cost, large-capacity storage device, Nand flash memory is used more and more widely in embedded systems. SLC (Single-Level Cell) flash memory is a kind of Nand flash memory. SLC uses positive and negative charges, and a floating gate stores one byte of information, with a lifespan of about 100,000 erases and writes. TLC (Triple-LevelCell) flash memory is a kind of Nand flash memory that is widely used in the market at present. TLC uses charges of different potentials, and a floating gate stores 3 bytes of information, with a lifespan of about 500-1000 times. For TLC flash memory For example, due to its limited number of times of erasing and writing, frequent writing of large amounts of data is unbearable for TLC flash memory. It can be seen that ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C29/42G11C7/00
CPCG11C29/42G11C7/00
Inventor 孙成思孙日欣李振华赖永富邱家扬许志全
Owner BIWIN STORAGE TECH CO LTD
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