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Epitaxial structure of AlInGaN-base multiple quantum well light emitting diode

A technology of light-emitting diodes and epitaxial structures, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as V-pit enhancement of hole injection, and achieve the effect of improving matching and increasing luminous efficiency

Active Publication Date: 2017-06-30
NANCHANG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this random distribution does not affect the function of V pits to shield dislocations, it cannot optimize the function of V pits to enhance hole injection.

Method used

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  • Epitaxial structure of AlInGaN-base multiple quantum well light emitting diode
  • Epitaxial structure of AlInGaN-base multiple quantum well light emitting diode
  • Epitaxial structure of AlInGaN-base multiple quantum well light emitting diode

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Embodiment 1

[0031] This embodiment introduces the epitaxial structure in which the starting position of the V-pit is the substrate.

[0032] refer to Figure 5 . In the figure, 1 is the substrate, on which the "process V-pit" 4 is periodically arranged, and the schematic diagram of the projection of the "artificial V-pit" 4 on the upper surface of the substrate 1 is as follows: Figure 4 shown. The buffer layer 2 is grown on the substrate 1. Due to the existence of the "process V pit" 4 on the substrate 1, a semipolar surface buffer layer will also be grown on the sidewall of the "process V pit" 4; The growth rate on the polar face is smaller than that on the polar face. Therefore, a "process V-pit" 4 will also be formed in the buffer layer 2. The size of the "process V-pit" 4 in the buffer layer 2 is larger than the size of the "process V-pit" 4 in the substrate 1, and inherits the Periodic arrangement of "process V-pit" 4 . Similarly, growing the N-type AlInGaN layer 3 on the buffe...

Embodiment 2

[0034] Compared with Example 1, the substrate 1 is changed to have no "process V-pit" structure, that is, the "process V-pit" 4 starts in the buffer layer 2; the epitaxial structure refers to Figure 6 . In this epitaxial structure, the "process V-pit" 4 needs to be introduced after the buffer layer 2 is grown. Therefore, the entire epitaxial structure needs to be completed by means of secondary epitaxy.

Embodiment 3

[0036] Compared with Example 2, the buffer layer 2 is changed to have no "process V-pit" structure, that is, the "process V-pit" 4 starts in the N-type AlInGaN layer 3; the epitaxial structure refers to Figure 7 . The epitaxial structure needs to grow the N-type AlInGaN layer 3 before introducing the "process V-pit" 4, so a secondary epitaxial method is required to complete the entire epitaxial structure.

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Abstract

The invention discloses an epitaxial structure of an AlInGaN-base multiple quantum well light emitting diode. The structure comprises a substrate used for material growing and an AlInGaN-base semiconductor lamination layer stacked on the substrate. The AlInGaN-base semiconductor lamination layer at least comprises an N-type layer, a P-type layer and an AlInGaN multiple quantum well sandwiched between the N-type layer and the P-type layer. The structure is characterized in that V pits which are periodically arranged in growing surfaces are embedded in the multiple quantum well, and the V pits are same in size. By means of the epitaxial structure of the AlInGaN-base multiple quantum well light emitting diode, optimization that the V pits enhance the electron hole injection function can be achieved, and the matching degree of the electron hole and electrons is improved, so that LED emitting efficiency is improved.

Description

technical field [0001] The invention relates to semiconductor materials, in particular to an epitaxial structure of an AlInGaN-based multi-quantum well light-emitting diode. Background technique [0002] Aluminum indium gallium nitride (AlInGaN)-based light-emitting diodes (LEDs) have a wide range of uses and can be used in markets such as instrument work instructions, traffic lights, large-screen displays, and general lighting. However, although great progress has been made, AlInGaN-based LEDs still have many problems, which hinder their further popularization and application. The mismatch between hole concentration and electron concentration in the multiple quantum wells of AlInGaN-based LED structure is one of the most important problems: 1. Due to the low activation efficiency of Mg in GaN, it is difficult to obtain P-type GaN with high hole concentration , so that the concentration of holes injected into the quantum well is lower than that of electrons, and the accumul...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/02H01L33/32
CPCH01L33/025H01L33/06H01L33/32
Inventor 全知觉陶喜霞徐龙权丁杰莫春兰张建立王小兰刘军林江风益
Owner NANCHANG UNIV