Grinding method of semiconductor silicon wafer

Abstract

The invention provides a method for grinding semiconductor silicon wafers. According to the method, a double-sided grinding process is adopted, an appropriate grinding disc, appropriate grinding fluid and appropriate technological parameters such as the grinding pressure and the grinding rotation speed are selected, the surfaces of the obtained silicon wafers are free of knife marks, crow-claw-shaped marks, scratches, cracks and the like, and the surface smoothness is good. According to the surface machining accuracy, TTV is smaller than or equal to 1 [mu]m, SFQR is smaller than or equal to 50 nm, and Ra is smaller than or equal to 100 nm. In addition, a ceramic disc replaces a cast iron disc, and therefore the introduction of metal ions is reduced, the subsequent processing amount of the silicon wafers can be reduced, the subsequent process (corrosion) time is shortened, the production efficiency is improved, loss of silicon wafer processing is reduced, and the utilization rate of the silicon wafers is increased.

Description

technical field [0001] The invention relates to a grinding method for semiconductor silicon wafers, in particular to the control of metal ions, and belongs to the field of single crystal silicon processing. Background technique [0002] With the rapid development of semiconductor devices, the requirements for monocrystalline silicon wafers are getting higher and higher. Since the main surface of the wafer is the surface on which the device pattern is drawn, it is necessary to avoid scratches or contamination of the main surface of the wafer as much as possible. The introduction of trace impurity elements between components during the entire production process of silicon wafers may reduce the yield of chips. Specific pollution problems can lead to different defects in semiconductor devices, such as excessive metals and heavy metals (Fe, Cr, Ni, Cu, etc.), which can shorten the life of the components or increase the dark current of the components. As the raw material of semi...

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Problems solved by technology

[0004] At present, the grinding discs used in the double-sided grinding process are mainly cast iron discs. The use of iron discs is easy to cause scratches or pollution on the main surface of the wafer. Due to the introduction of a large number of metal ions and the large damage layer of mechanical stress, the subsequent process (corrosion) processing of the wafer Large amount, long etching time, large processing loss, and relatively low utilization rate of silicon wafers

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