Oxide semiconductor and oxide film transistor manufacturing method and display panel
A technology of oxide semiconductor and oxide thin film, applied in the field of electronics, can solve problems such as small process margin, prone to reliability problems, and long product development cycle, so as to reduce Vth drift, eliminate initial depletion layer, and increase reliability sexual effect
Inactive Publication Date: 2017-07-11
BOE TECH GRP CO LTD
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[0003] Although oxide semiconductors have the above advantages, they also have some characteristics that are not as good as a-Si, such as poor stability
For hydrogen in the air (H 2 ) and oxygen (O 2 ), water (H 2 O) and other gases are sensitive, so the characteristics of oxide thin film transistors (TFT, Thin Film Transistor) have poor stability in the environment, the process margin is small, the product development cycle is long, and reliability problems are prone to occur
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[0027] In order to make the purpose, technical solution and advantages of the present invention more clear, the embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined arbitrarily with each other.
[0028] When an oxide semiconductor such as IGZO is used as the active layer, due to the characteristics of the oxide itself, it will absorb oxygen O in the air. 2 A depletion layer (also called initial depletion layer in the preparation process) is formed on the surface, and oxygen O 2 O 2 - , O - Plasma, these ions will react with hydrogen H in the air 2 , water H 2 Gases such as O react, thereby changing the thickness of the initial depletion layer on the oxide surface, affecting the resistance of the oxide active layer, and causing the threshold voltage Vth to drift. ...
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The invention discloses an oxide semiconductor and oxide film transistor manufacturing method and a display panel. The method comprises: prior to the deposition of a first layer, processing an exposed oxide semiconductor with a reducing gas to eliminate the initial depletion layer; and performing the deposition of the first layer. According to the oxide semiconductor manufacturing method proposed by the invention, a reducing gas is utilized for the oxygen anion reaction on the surface of the active layer of the oxide to eliminate the initial depletion layer, which greatly reduces the change amount in the resistance of the semiconductor oxide, thereby reducing the Vth drift and improving the stability of the oxide as an active layer and increasing the reliability of the oxide TFT. In addition, the technical schemes of the invention have simple processes and facilitate the large-scale production of a production line.
Description
technical field [0001] The present invention relates to but not limited to electronic technology, especially to a method for preparing an oxide semiconductor and an oxide thin film transistor and a display panel. Background technique [0002] With the increasing demand for high resolution, narrow frame and low power consumption, the traditional amorphous silicon (a-Si) active layer can no longer meet the requirements of use, so it is necessary to find a higher load-carrying layer. The carrier mobility of other semiconductors meets the requirements for use as well. Some oxide semiconductors represented by Indium Gallium Zinc Oxide (IGZO, Indium Gallium Zinc Oxide) are the best choice to replace the traditional a-Si active layer due to the simple preparation method and high carrier mobility. At present, the display panels of the Apple Ipad series use oxide technology, and oxide semiconductors such as IGZO are receiving more and more attention. [0003] Although oxide semicon...
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IPC IPC(8): H01L21/465H01L21/34H01L27/12
CPCH01L21/465H01L27/1225H01L29/66969
Inventor 班圣光曹占锋姚琪刘清召董水浪路达
Owner BOE TECH GRP CO LTD