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A kind of semiconductor device and its manufacturing method, electronic device

A manufacturing method and technology of electronic devices, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problems of large channel size, large capital investment, and expensive maintenance of advanced lithography machines, and achieve cost reduction The effect of low cost and low manufacturing cost

Active Publication Date: 2019-12-13
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the limited analytical capability of traditional lithography machines, after the exposure and development process, the defined channel size is relatively large, and it is impossible to define a small-sized channel (90nm) that meets the requirements of EEPROM devices below the 0.15um technology node at one time.
[0003] The current solution to this problem is mainly to develop advanced lithography technology and supporting equipment, but this requires a lot of capital investment, and the maintenance of advanced lithography machines is expensive

Method used

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  • A kind of semiconductor device and its manufacturing method, electronic device
  • A kind of semiconductor device and its manufacturing method, electronic device
  • A kind of semiconductor device and its manufacturing method, electronic device

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Embodiment 1

[0040] The following will refer to Figure 2A ~ Figure 2L as well as image 3 A method for fabricating a semiconductor device according to an embodiment of the present invention will be described in detail.

[0041] First, step 101 is performed: providing a semiconductor substrate 200, on which a first dielectric layer 201 with a first thickness is formed, and on which a hard mask layer 202 is formed , anti-reflective layer 203 and photoresist layer 204, the formed structure is as Figure 2A shown.

[0042] Wherein, the semiconductor substrate 200 can be at least one of the materials mentioned below: Si, Ge, SiGe, SiC, SiGeC, InAs, GaAs, InP or other III / V compound semiconductors, and also includes multiple semiconductors composed of these semiconductors. The layer structure or the like may be silicon-on-insulator (SOI), silicon-on-insulator (SSOI), silicon-germanium-on-insulator (S-SiGeOI), silicon-germanium-on-insulator (SiGeOI), and germanium-on-insulator (GeOI). Device...

Embodiment 2

[0083] The present invention also provides a semiconductor device, such as Figure 4 As shown, the semiconductor device includes: a semiconductor substrate 400, a first dielectric layer 401 having a first thickness is formed on the semiconductor substrate 400, and a layer having a first width is formed in the first dielectric layer 401. The first opening 402, the middle region of the first opening 402 is formed with a second dielectric layer 403 having a second thickness on the semiconductor substrate, and two other openings are formed in the first opening 402 respectively located on the first opening 402. A third dielectric layer 404 with a third thickness on both sides of the second dielectric layer, wherein the first thickness and the second thickness are greater than the third thickness, and the width of the third dielectric layer is smaller than the first width.

[0084] Further, the semiconductor device further includes a gate material layer 405 covering one of the thir...

Embodiment 3

[0088] Still another embodiment of the present invention provides an electronic device, including a semiconductor device and an electronic component connected to the semiconductor device. Wherein, the semiconductor device includes: a semiconductor substrate, on which a first dielectric layer with a first thickness is formed, and a first opening with a first width is formed in the first dielectric layer, so A second dielectric layer with a second thickness is formed on the semiconductor substrate in the middle region of the first opening, and two dielectric layers with the second thickness on both sides of the second dielectric layer are also formed in the first opening. A third dielectric layer with three thicknesses, wherein the first thickness and the second thickness are larger than the third thickness, and the width of the third dielectric layer is smaller than the first width.

[0089] Further, the semiconductor device further includes a gate material layer covering the t...

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Abstract

The present invention provides a manufacturing method of a semiconductor device, a semiconductor device and an electronic device. The manufacturing method includes: providing a semiconductor substrate, on which a first dielectric layer with a first thickness is formed, and in the first A first opening with a first width is formed in the dielectric layer; spacers are formed on both sidewalls of the first opening; a second dielectric layer with a second thickness is formed on the semiconductor substrate in the first opening ; removing the spacers on the sidewalls of the first opening to form two second openings with a second width; step forming a third dielectric layer with a third thickness on the semiconductor substrate in the second openings ; Wherein, the first width is greater than the second width, and the first thickness and the second thickness are greater than the third thickness. The manufacturing method can form a small-sized tunnel oxide layer without using more advanced photolithography process and equipment. The semiconductor device and electronic device have the advantage of being less expensive.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a semiconductor device, a manufacturing method thereof, and an electronic device. Background technique [0002] Electrically Erasable Programmable Read-Only Memory (EEPROM, Electrically Erasable Programmable Read-Only Memory) is a storage device that does not lose data after power failure; it can erase existing information on a computer or special equipment and reprogram it. As an important storage device, the EEPROM device stores information by applying a voltage on the control gate (Control GATE) so that electrons enter the floating gate (Floating GATE) through the tunnel oxide layer (tunnel OX), thereby so that the information is preserved. However, with the continuous development of electronic technology and semiconductor technology and actual needs, the size of EEPROM devices is bound to become smaller and smaller, and the reduction of EEPROM devices puts for...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11521H01L27/11526H01L21/28H01L29/423H10B69/00H10B41/30H10B41/40
CPCH01L29/42328H10B41/30H01L29/42324H01L21/31111H01L21/31116H01L21/32H01L29/40114H01L21/823468H01L21/311
Inventor 黄鹏李俊代洪刚顾官官
Owner SEMICON MFG INT (SHANGHAI) CORP