Check patentability & draft patents in minutes with Patsnap Eureka AI!

Modulated electron beam pumped semiconductor quantum dot white light random laser communication light source

A technology of random laser and quantum dot light emission, which is applied in the field of optical communication to achieve the effect of increasing optical output power, improving quantum efficiency and frequency response characteristics, and improving frequency response characteristics

Active Publication Date: 2020-06-26
CHANGCHUN UNIV OF SCI & TECH +2
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to improve the modulation bandwidth of visible light wireless communication and increase the channel capacity and modulation rate of the communication system, the existing technology focuses on the composition of the optoelectronic system and the design of the driving circuit. ability, and a specific light source scheme that doubles as a lighting source and a communication light source

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Modulated electron beam pumped semiconductor quantum dot white light random laser communication light source
  • Modulated electron beam pumped semiconductor quantum dot white light random laser communication light source
  • Modulated electron beam pumped semiconductor quantum dot white light random laser communication light source

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] In the modulated electron beam pumped semiconductor quantum dot white light random laser communication light source of the present invention, such as figure 1 As shown, an infrared seed light source 1, a collimating beam expander 2, a photocathode 3, a microchannel plate 4, an electron beam focusing electrode 5, a transmissive anode 6 and a semiconductor quantum dot light-emitting layer 7 are arranged coaxially in sequence. The infrared seed light source 1 is a 1550nm or 1310nm near-infrared band optical fiber communication light source, which emits infrared pulse modulation signal light, and the modulation bandwidth is on the order of GHz. The collimating beam expander 2 shapes and expands the beam of the infrared pulse modulated signal light and projects it to the photocathode 3 . The photocathode 3 is a layer of InGaAs film, attached to the infrared high transmittance optical glass substrate 8, and converts the infrared pulse modulation signal light into photocurrent...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a modulated electron beam pump semiconductor quantum dot white light random laser communication light source, and belongs to the technical field of optical communication. The modulation bandwidth is narrow and the structure is complex in the prior art. According to the modulated electron beam pump semiconductor quantum dot white light random laser communication light source, an infrared seed light source, a collimating and beam expanding lens, a photoelectric cathode, a micro-channel plate, an electron beam focusing electrode, a transmission anode and a semiconductor quantum dot luminescent layer are coaxially arranged in turn. Voltage of the same direction is applied among the photoelectric cathode, the micro-channel plate, the electron beam focusing electrode and the transmission anode. The transmission anode covers the semiconductor quantum dot luminescent layer. Blue light, green light and red light semiconductor quantum dots of equal molar weight are evenly distributed in the semiconductor quantum dot luminescent layer, and precious metal nano-crystals which are corresponding to the blue light, the green light and the red light and have the extinction effect are also evenly distributed. The modulated electron beam pump semiconductor quantum dot white light random laser communication light source is applied to visible light wireless communication and emits white light random laser carrier waves through pump modulation of modulated electron beams so that indoor lighting can be performed and visible light wireless communication can also be realized.

Description

technical field [0001] The invention relates to a modulated electron beam pumped semiconductor quantum dot white light random laser communication light source, which is used for visible light wireless communication (Li-Fi), emits a white light random laser carrier modulated by the modulated electron beam pump, and performs indoor lighting at the same time , realizing visible light wireless communication, belonging to the technical field of optical communication. Background technique [0002] The light source of visible light wireless communication must not only meet the requirements of high brightness, low power consumption, and wide radiation range as a lighting source, but also have the characteristics of wide modulation bandwidth and high optical output power as a communication light source, so as to obtain the communication system. communication rate. [0003] The modulation bandwidth of a communication light source is limited by the response rate. Although compared wi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/04H01S5/34
CPCH01S5/04H01S5/34
Inventor 刘春阳母一宁王帅于长明李野王新宋德杨继凯王连锴陈卫军秦旭磊
Owner CHANGCHUN UNIV OF SCI & TECH
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More