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Method for manufacturing nanometer lamination conductive film and applications

A technology of conductive thin film and nano lamination, which is applied in the direction of coating, circuit, photovoltaic power generation, etc., to achieve the effect of reducing conversion efficiency

Inactive Publication Date: 2017-07-25
JIANGSU MICROVIA NANO EQUIP TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention is aimed at the process flow of the existing PERC battery technology, adopts ALD technology for processing, and directly uses the conductive transparent material layer as the passivation layer, thereby solving the problem of large parasitic resistance and contact resistance, improving the conversion efficiency of the battery, and applicable for mass production

Method used

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  • Method for manufacturing nanometer lamination conductive film and applications
  • Method for manufacturing nanometer lamination conductive film and applications
  • Method for manufacturing nanometer lamination conductive film and applications

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Experimental program
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Embodiment 1

[0037] In this patent, different process conditions (process vacuum, process temperature), different proportions (n1, n2, n3 values, alumina doping degree (n2 / (n1+n2)at%) are used to prepare different Properties (thickness, resistivity) of the thin film, the specific relationship between each parameter is as follows:

[0038] Table 1 Comparison table between preparation conditions, ingredients and properties

[0039]

Embodiment 2

[0041] In order to realize the purpose of the present invention, it is more convenient to collect current by adopting materials with lower resistivity, comprehensively considering factors such as preparation conditions and proportioning, under the conditions of process vacuum 100 Pa and process temperature 200 degrees Celsius, fix n2=1, control oxidation When the doping degree of aluminum in the film is between 1at% and 7at%, the resistivity of the film is small, at 1.5×10 -3 ohm·cm to 3.0×10 -3 ohm·cm changes, and in the test with 1.5×10 -3 ohm·cm is a minimum measurement.

[0042] Comparison table between the preparation conditions, ingredients and properties of the preferred embodiment of table 2

[0043]

Embodiment 3

[0045] The nano-lamination transparent conductive film prepared by the patent method is used for emitter passivation in solar cells with PERC structure. refer to figure 2 As shown, the Al-doped ZnO film is used to replace the AlO layer in the PERC cell, and its negative charge will passivate the p-emitter on the back. At the same time, the conductive film can collect current and reduce the contact resistance caused by the small opening area. The upper surface of the cell can also be passivated with a p-type doped transparent conductive film.

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Abstract

The invention belongs to the field of a semiconductor device, relates to the solar energy cell manufacturing field and particularly relates to a method for manufacturing a nanometer lamination transparent conductive film in combination with the atomic layer deposition technology and applications to solar energy cell surface passivation and current collection. The method is advantaged in that based on the process flow of the PERC cell technology in the prior art, a metal oxide nanometer lamination conductive film manufactured through employing the atomic layer deposition technology is taken as a passivation layer, so problems of large parasitic resistance and large contact resistance are solved, cell conversion efficiency is improved, and the method is suitable for large-scale production.

Description

technical field [0001] This patent belongs to the field of semiconductor devices, specifically relates to the field of solar cell manufacturing, in particular to a method for preparing a nano-laminated transparent conductive film combined with atomic layer deposition technology and its application in surface passivation and current collection of solar cells. Background technique [0002] Surface passivation is an important technical means to reduce the surface recombination rate and improve the conversion efficiency of silicon solar cells. (Solar Energy Materials & Solar Cells, 2006, (90): 82-92) passivated emitter back contact technology (PERC technology), after surface flocking and diffusion, use PECVD method to plate aluminum oxide film as the back passivation layer , with silicon nitride thin film anti-reflection layer. Since aluminum oxide and silicon nitride are insulating materials, the subsequent silver paste aluminum paste electrodes must be connected to the silico...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0224H01L31/0216H01L31/068C23C16/455C23C16/40C23C16/02
CPCC23C16/0272C23C16/403C23C16/407C23C16/45525H01L31/02167H01L31/022483H01L31/02366H01L31/048H01L31/0481H01L31/0682H01L31/186H01L31/1868H01L31/1884Y02E10/547Y02P70/50
Inventor 李翔黎微明潘景伟
Owner JIANGSU MICROVIA NANO EQUIP TECH CO LTD