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Gallium nitride nanorod LED epitaxial wafer grown on silicon substrate and preparation method for LED epitaxial wafer

A technology of LED epitaxial wafers and gallium nitride nanometers, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc. Effects of defect density, improvement of luminous efficiency, and improvement of radiative recombination efficiency

Active Publication Date: 2017-07-25
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for some LED epitaxial wafers with nanocolumn structures formed by etching, the damage caused by etching makes the surface recombination in nanocolumns very serious, which has a great impact on the device performance of GaN nanocolumn LEDs.

Method used

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  • Gallium nitride nanorod LED epitaxial wafer grown on silicon substrate and preparation method for LED epitaxial wafer
  • Gallium nitride nanorod LED epitaxial wafer grown on silicon substrate and preparation method for LED epitaxial wafer

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Embodiment 1

[0035] The preparation method of the gallium nitride nanocolumn LED epitaxial wafer grown on the silicon substrate of this embodiment comprises the following steps:

[0036] (1) Selection of substrate: use ordinary silicon substrate;

[0037] (2) Substrate cleaning: Put the silicon substrate into a mixed solution of hydrofluoric acid and deionized water with a volume ratio of 1:20 and ultrasonically clean it for 2 minutes to remove oxides and dirt particles on the surface of the silicon substrate, and then put it into the deionized water. Ultrasound in deionized water for 2 minutes to remove surface impurities and blow dry with high-purity dry nitrogen;

[0038] (3) Deposition of metal indium droplets: the molecular beam epitaxy growth process was adopted, the substrate temperature was adjusted to 600°C, and the pressure in the reaction chamber was 5.0×10 -5 Pa, under the condition that the growth rate is 0.2ML / s, the metal indium in the indium beam source is annealed while d...

Embodiment 2

[0046] The preparation method of the gallium nitride nanocolumn LED epitaxial wafer grown on the silicon substrate of this embodiment comprises the following steps:

[0047] (1) Substrate: adopt ordinary silicon substrate;

[0048] (2) Substrate cleaning: Put the silicon substrate into a mixed solution of hydrofluoric acid and deionized water with a volume ratio of 1:20 and ultrasonically clean it for 2 minutes to remove oxides and dirt particles on the surface of the silicon substrate, and then put it into the deionized water. Ultrasound in deionized water for 1 minute to remove surface impurities, and blow dry with high-purity dry nitrogen;

[0049] (3) Deposition of metal indium droplets: the molecular beam epitaxy growth process was adopted, the substrate temperature was adjusted to 550°C, and the pressure in the reaction chamber was 5.0×10 -5 Pa, under the condition that the growth rate is 0.2ML / s, the metal indium in the indium beam source is annealed while depositing o...

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Abstract

The invention discloses a gallium nitride nanorod LED epitaxial wafer grown on a silicon substrate. The gallium nitride nanorod LED epitaxial wafer comprises multiple nanorods grown on the silicon substrate; and each nanorod comprises a non-doped indium-containing gallium nitride nanorod, an n type doped gallium nitride layer, indium gallium nitride / gallium nitride multiple quantum wells and a p type doped gallium nitride layer from the bottom up in sequence. The invention also discloses a preparation method for the gallium nitride nanorod LED epitaxial wafer grown on the silicon substrate; the preparation method comprises the following steps of (1) cleaning of the silicon substrate; (2) depositing of metal indium liquid drops; (3) growth of the non-doped indium-containing gallium nitride nanorods; (4) growth of the n type doped gallium nitride layer; (5) epitaxial growth of the indium gallium nitride / gallium nitride multiple quantum wells; and (6) epitaxial growth of the p type doped gallium nitride layer. The preparation method has the advantages of simple growth process and low preparation cost; and the prepared LED epitaxial wafer is low in defect density, high in crystallization quality, and high in electrical and optical performance.

Description

technical field [0001] The invention relates to an LED epitaxial wafer, in particular to a gallium nitride nanocolumn LED epitaxial wafer grown on a silicon substrate and a preparation method thereof. Background technique [0002] As a new type of solid-state lighting source and green light source, light-emitting diode (LED) has outstanding features such as energy saving, environmental protection, small size, wide range of uses and long service life. It has a wide range of applications in the fields of outdoor lighting, commercial lighting and military lighting. application. At present, under the background of the increasingly serious problem of global warming, saving energy and reducing greenhouse gas emissions have become important issues facing the world. A low-carbon economy based on low energy consumption, low pollution, and low emissions is an important direction for economic development. In the field of lighting, LED, as a new type of green solid-state lighting prod...

Claims

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Application Information

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IPC IPC(8): H01L33/22H01L33/12H01L33/00H01L21/02
CPCH01L33/0066H01L33/0075H01L33/12H01L33/22H01L21/02381H01L21/02458H01L21/0254H01L21/02631Y02P70/50
Inventor 李国强韩晶磊温雷高芳亮
Owner SOUTH CHINA UNIV OF TECH
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