Manufacturing process of silicon wafer circuit board of LED lamp
A manufacturing process, LED lamp technology, applied in the direction of circuit, electrical components, semiconductor/solid-state device manufacturing, etc., can solve the problems of circuit board surface depressions and holes, reduce production efficiency, increase production costs, etc., to improve curvature and flatness The effect of improving production efficiency and reducing production cost
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Embodiment 1
[0019] A manufacturing process of a silicon wafer circuit board for an LED lamp, the manufacturing process steps of the silicon wafer circuit board are:
[0020] (1) Fix the slice, fix the pre-prepared monocrystalline silicon rods on the processing table, then cut the monocrystalline silicon into monocrystalline silicon wafers with uniform thickness, and continuously pour distilled water on the monocrystalline silicon wafers at the same time;
[0021] (2) Thermal annealing treatment. The single crystal silicon wafer after the previous step of slicing is heated at a high temperature through a thermal oxidation furnace and annealed until it is heated to 400°C, and then the surface of the single crystal silicon wafer in the thermal oxidation furnace is Inflate with oxygen and last for 15 minutes;
[0022] (3) chamfering treatment, the edge of the monocrystalline silicon wafer after the annealing treatment in step 2 is carried out through a fine grinding wheel for grinding and fin...
Embodiment 2
[0030] A manufacturing process of a silicon wafer circuit board for an LED lamp, the manufacturing process steps of the silicon wafer circuit board are:
[0031] (1) Fix the slice, fix the pre-prepared monocrystalline silicon rods on the processing table, then cut the monocrystalline silicon into monocrystalline silicon wafers with uniform thickness, and continuously pour distilled water on the monocrystalline silicon wafers at the same time;
[0032] (2) Thermal annealing treatment, the single crystal silicon wafer after the previous step of slicing is heated at a high temperature through a thermal oxidation furnace and annealed until it is heated to 440 ° C, and then the surface of the single crystal silicon wafer in the thermal oxidation furnace is Fill with oxygen and last for 11 minutes;
[0033] (3) chamfering treatment, the edge of the monocrystalline silicon wafer after the annealing treatment in step 2 is carried out through a fine grinding wheel for grinding and fini...
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