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LED electrode manufacturing method, LED electrode and LED chip

A manufacturing method and an electrode technology, which are applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve the problems of low reflectivity of LED electrodes, and achieve the effects of good thermal stability of Rh, improved reflectivity, and improved LOP

Active Publication Date: 2017-09-01
XIANGNENG HUALEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of this, the present invention provides a method for manufacturing LED electrodes, LED electrodes and LED chips, which solves the technical problem of low reflectivity of LED electrodes in the prior art

Method used

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  • LED electrode manufacturing method, LED electrode and LED chip
  • LED electrode manufacturing method, LED electrode and LED chip
  • LED electrode manufacturing method, LED electrode and LED chip

Examples

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Embodiment 1

[0031] refer to figure 1 , The embodiment of the present invention provides a method for manufacturing LED electrodes. Electrodes are evaporated by electron beam vacuum evaporation coating, wherein the order of evaporation electrode film layers is Rh, Al, Ti, Pt, Ti, Pt and Au. When evaporating LED electrodes, the Rh layer is first evaporated, and then the Al layer is evaporated to form a RhAl reflective electrode. The process is simple, Rh has good thermal stability, and there is no risk of electrode drop, which improves electrode stability and improves the reflectivity of the reflective electrode. , can produce LED chips with high luminous efficiency.

[0032] The step of evaporating the electrode film layer in the LED electrode manufacturing method provided by the embodiment of the present invention includes: the evaporating thickness of the Rh layer is The evaporation rate during Rh plating is The evaporated thickness of the Al layer is The evaporation rate during Al...

Embodiment 2

[0038] refer to figure 1 , an LED electrode, the electrode film layer of the electrode deposited by electron beam vacuum evaporation coating is Rh layer, Al layer, first layer Ti, first layer Pt, second layer Ti, second layer from bottom to top. layer Pt and Au layer.

[0039] In this embodiment, the evaporation thickness of the Rh layer is The evaporation rate during Rh plating is The evaporated thickness of the Al layer is The evaporation rate during Al plating is The evaporation thickness of the first layer of Ti is The evaporation rate when plating the first layer of Ti is The evaporation thickness of the first layer of Pt is The evaporation rate when plating the first layer of Pt is The evaporation thickness of the second layer Ti is The evaporation rate when plating the second layer of Ti is The evaporation thickness of the second layer of Pt is The evaporation rate when plating the second layer of Pt is The evaporated thickness of the Au layer is ...

Embodiment 3

[0044] The present invention also provides an LED chip, wherein the LED electrodes in the LED chip are the LED electrodes described in Embodiment 2 above.

[0045] The LED chip structure includes an n-electrode and a p-electrode. Preferably, the n-electrode is an electrode made by a conventional vacuum evaporation method, and the p-electrode is an electrode made by the method described in Example 1 of the present invention, that is, the p-electrode film layer is from bottom to bottom. The upper order is Rh / Al / Ti / Pt / Ti / Pt / Au.

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Abstract

The invention discloses a LED electrode manufacturing method, an LED electrode and an LED chip. According to the LED electrode manufacturing method, electrodes are evaporated by means of electron-beam vacuum vapor plating; and an Rh evaporated electrode film layer, an Al evaporated electrode film, a Ti evaporated electrode film, a Pt evaporated electrode film, a Ti evaporated electrode film, a Pt evaporated electrode film and an Au evaporated electrode film are arranged successively. During LED electrode evaporation, the Rh layer is evaporated and then the Al layer is evaporated to form an RhAl relection electrode. The process is simple and the electrode stability is improved. Meanwhile, the reflectivity of the reflection electrode is enhanced and an LED chip with high light-emitting efficiency is manufactured.

Description

technical field [0001] The invention relates to the technical field of LED chips, more specifically, a method for manufacturing LED electrodes, LED electrodes and LED chips. Background technique [0002] LED (Light Emitting Diode, light emitting diode) is a semiconductor solid light emitting device. Using a solid semiconductor chip as a light-emitting material, the excess energy is released in the form of light through the recombination of carriers in the semiconductor. LED has the advantages of high efficiency, energy saving, environmental protection, and long service life, and is widely used in various fields such as display screens, indoor lighting, and outdoor lighting. [0003] In a traditional LED chip, the P electrode and N electrode generally use a Ni / Au structure or a Cr / Pt / Au structure. Although these two metal electrode structures have good stability, a large part of the light emitted from the inside of the chip will be absorbed by the electrodes. , affecting th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/285H01L33/00H01L33/40
CPCH01L21/28506H01L33/005H01L33/405
Inventor 胡卫
Owner XIANGNENG HUALEI OPTOELECTRONICS