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Simple flip high-voltage LED chip preparation method

A LED chip, high-voltage technology, applied in the direction of electrical components, electric solid devices, circuits, etc., can solve the problem of low light efficiency of chips, achieve high light efficiency, simplify the number of times of die bonding and bonding, and increase the current density.

Inactive Publication Date: 2017-09-01
HUAIAN AUCKSUN OPTOELECTRONICS TECHNOLOGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the LED lighting chips produced by domestic enterprises mostly use discrete LEDs, and the light efficiency of the chips is low (100-120lm / W)

Method used

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  • Simple flip high-voltage LED chip preparation method
  • Simple flip high-voltage LED chip preparation method
  • Simple flip high-voltage LED chip preparation method

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Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0034] This embodiment provides a method for preparing a simple flip-chip high-voltage LED chip, which mainly includes the following steps:

[0035] S1: Provide a light-transmitting substrate 1001 having n chip unit areas A1, A2...An, one flip-chip high voltage LED chip A consists of m chip unit areas A1, A2...Am The end and end are connected in series, where n≥2, 2≤m≤n.

[0036] In this embodiment, for the convenience of illustration and description, m is set to be equal to 3, that is, a flip-chip high-voltage LED chip A is formed by connecting three chip unit areas A1, A2 and A3 in series end to end.

[0037] The above-mentioned light-transmitting substrate 1001 can be selected from sapphire Al 2 O 3 Or gallium nitride GaN, etc.

[0038] S2: growing an epitaxial layer on the light-transmitting substrate 1001. like figure 1 and2 , the epitaxial layers here are buffer layer Buffer1018, N-type semiconductor layer N-GaN1019, light-emitting layer MQW1020 and P-type semicondu...

Embodiment approach 2

[0061] This embodiment is a further improvement of Embodiment 1, and the main improvement is: in order to weaken the problem of low light extraction efficiency caused by the total reflection angle of the light-transmitting substrate 1001, in this embodiment, each flip-chip high-voltage LED chip A is manufactured Compared with Embodiment 1, the method of forming a chip has been improved. In this embodiment, after grinding and polishing the transparent substrate 1001 (the grinding thickness can also be in the range of 50-500um), the transparent substrate 1001 after grinding and polishing is ground and polished. The surface of the optical substrate 1001 is roughened first, and then the light-transmitting substrate 1001 after the surface roughening is subjected to laser scribing, so as to divide each flip-chip high-voltage LED chip A into flip-chip high-voltage LED chips with roughened light-emitting surfaces. HV Flip Chip LEDs. The surface of the roughened light-transmitting subs...

Embodiment approach 3

[0064] This embodiment is a further improvement of Embodiment 1. The main improvement is that in this embodiment, the method of making each flip-chip high-voltage LED chip A into a chip has been improved compared with Embodiment 1. After the substrate 1001 is ground and polished, the light-transmitting substrate 1001 after grinding and polishing is removed by laser peeling, and then each flip-chip high-voltage LED chip A is divided into thin-film flip-chip high-voltage LED chips A by laser scribing. HV FlipChip LEDs. In this way, the prepared flip-chip high-voltage LED chip can completely remove the light-transmitting substrate 1001, and its bottom surface forms a fast heat conduction channel through the metal electrode and the bracket, and the heat source of the light-emitting layer on the top surface directly contacts the encapsulation colloid, so that the heat conduction of the chip The channel is the shortest.

[0065]Except for this, this embodiment is exactly the same a...

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Abstract

The invention relates to the field of LED chip process and discloses a simple flip high-voltage LED chip preparation method. The method comprises the following steps: carrying out etching on an epitaxial layer to form an isolation groove and an N electrode groove to form a Mesa platform; carrying out deep etching on the isolation groove to form an isolation channel; preparing a current blocking layer covering a part of bottom portion of the N electrode groove, a part of the Mesa platform and a part of isolation channel between adjacent two chip unit areas; forming an ohmic contact layer covering a part of the Mesa platform and all of a second current blocking layer; preparing current extension leads covering the current blocking layer; preparing an isolation reflection layer and forming a P conductive channel and an N conductive channel thereon; preparing a P welding pad and an N welding pad for welding; and preparing a chip. The method can prevent light absorption of the conductive layer on a P electrode and light shading of the electrode welding pads simultaneously, thereby reducing drive voltage and improving light intensity; and the method can reduce energy loss during voltage conversion, relieve current accumulation and facilitate optical design.

Description

technical field [0001] The invention relates to the field of manufacturing technology of LED chips, in particular to a manufacturing method of a simple flip-chip high-voltage LED chip. Background technique [0002] As a pillar industry in the field of energy saving, the LED industry has been vigorously supported by the government from the beginning of its development. With the continuous increase of investment in the production capacity of the LED industry, the demand for LED chips has shown a trend of saturation, resulting in higher and higher requirements for the cost of chips in the upstream field of the LED industry. In order to meet the needs of the market, high yield, low cost, and high luminous efficiency have become the focus of LED chip research and development. [0003] A traditional GaN chip structure on a sapphire substrate, with the P and N electrodes just located on the light-emitting surface of the chip, in this structure, a small part of the p-GaN layer and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L27/15H01L33/38H01L33/48
Inventor 李智勇张向飞刘坚
Owner HUAIAN AUCKSUN OPTOELECTRONICS TECHNOLOGY CO LTD