GaN chip and manufacturing method thereof

Abstract

The invention discloses a GaN chip and a manufacturing method thereof. The GaN chip comprises a silicon substrate, a SiN or AlN nucleating layer, a doped GaN buffer layer, an AlN or GaN isolating layer, GaN / InGaN / AlN / GaN double heterojunctions and an alumina gate medium. The GaN / InGaN / AlN / GaN double heterojunctions are provided with a non-doped GaN buffer layer, an AlN barrier layer, an InGaN barrier layer and a GaN cap layer which are arranged from the bottom to the top in turn. The SiN or AlN nucleating layer is arranged on the silicon substrate. The doped GaN buffer layer is arranged on the SiN or AlN nucleating layer. The AlN or GaN isolating layer is arranged on the doped GaN buffer layer. The alumina gate medium is arranged on the GaN cap layer. The performance of the GaN-based transistor can be improved, the working reliability of the GaN chip can be enhanced, the GaN chip is applied to the wearable equipment navigation chip and the navigation accuracy can be enhanced.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a GaN chip and a manufacturing method thereof. Background technique [0002] China's Beidou satellite navigation and positioning system (BDS) is a global satellite navigation system independently developed and established by my country. It is the third satellite navigation system established and put into use in the world after the United States' Global Positioning System (GPS) and Russia's GLONASS satellite navigation system. At present, satellite positioning technology is widely used, such as aviation, navigation and ground transportation navigation, unmanned driving, geological exploration and disaster early warning and many other fields have played an important role and brought huge economic benefits to the society. For a long time, the world's mainstream satellite navigation and positioning application technology has centered on the United States' GPS, because its k...

AI Technical Summary

Problems solved by technology

Semiconductor devices based on III-V compound semiconductor materials and processes have excellent performance, but the process is difficult and not as stable and mature as the CMOS process

Especially in the manufacturing process of heterojunction field effect transistors, the buffer layer is easy to leak current and cause the device to be broken down, which reduces the reliability of the device and the working life of the chip

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