OLED display substrate, manufacturing method therefor, and display device

A display substrate and manufacturing method technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems affecting the light extraction efficiency of OLED devices, and achieve the effect of improving light extraction efficiency

Active Publication Date: 2017-09-15
BOE TECH GRP CO LTD
View PDF10 Cites 20 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the bottom emission (Bottom Emission, BE) mode OLED device, the light direction within the exit cone can be directly emitted, and the part of the light direction outside the exit cone will be totally reflected at different interfaces, and the waveguid

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • OLED display substrate, manufacturing method therefor, and display device
  • OLED display substrate, manufacturing method therefor, and display device
  • OLED display substrate, manufacturing method therefor, and display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0072] like Figure 4 As shown, a groove structure is formed on the pixel defining layer 6 surrounding the sub-pixel area of ​​the display substrate, and the depth of the groove structure is equal to the thickness of the pixel defining layer 6 . A reflective layer 7 is formed on the side wall of the groove structure, and the slope angle θ of the side wall of the groove structure is defined by pixels. After the waveguide mode light in the layer is deflected and turned, as much as possible enters the exit cone A2 and becomes the exit mode light selection of principles.

[0073] If no light-emitting structure is prepared, only the light emitted by the organic light-emitting layer 3 within the exit cone A1 can become the outgoing mode light. The terminals of the light-emitting layer 3 and the transparent electrode 2 enter the pixel defining layer 6, and then transmit to the light-reflecting layer 7 in the pixel defining layer 6 and are turned by reflection. After turning, part of...

Embodiment 2

[0076] like Figure 5 As shown, a pixel defining layer 6 on the base substrate 1 is formed between adjacent sub-pixel regions, a thin film transistor array layer 5 is not provided in the peripheral region of the sub-pixel, and a groove is formed on the pixel defining layer 6 surrounding the sub-pixel region structure, the depth of the groove structure is equal to the sum of the thicknesses of the pixel defining layer 6 and the thin film transistor array layer 5 . A reflective layer 7 is formed on the side wall of the groove structure, and the slope angle θ of the side wall of the groove structure is defined by pixels. After the waveguide mode light in the layer is reflected and turned, as much as possible enters the exit cone A2, becoming Principle selection.

[0077] The display substrate of this embodiment has no thin film transistor array layer mode light, and the waveguide mode light only has organic light emitting layer / transparent electrode mode light and substrate subs...

Embodiment 3

[0080] like Figure 8 As shown, a pixel defining layer 6 on the base substrate 1 is formed around the sub-pixel area, and a thin film transistor array layer 5 is also provided in the sub-pixel surrounding area, and the pixel defining layer 6 surrounding the sub-pixel area and the thin film transistor array layer 5 are composed of A groove structure is formed on the stack structure, and the depth of the groove structure is equal to the sum of the thicknesses of the pixel defining layer 6 and the thin film transistor array layer 5 . A reflective layer 7 is formed on the side wall of the groove structure, and the groove structure corresponds to the slope angle θ of the side wall of the pixel defining layer 6 1 , The groove structure corresponds to the slope angle θ of the side wall of the thin film transistor array layer 5 2 After the waveguide-mode light in the pixel-defining layer and the thin-film transistor array layer is deflected by reflection, as many parts as possible en...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides an OLED display substrate, a manufacturing method therefor and a display device, and belongs to the technical field of display. The OLED display substrate comprises a thin film transistor array layer, a first electrode, a pixel defining layer, an organic light-emitting layer and a second electrode, which are all located on a substrate. The pixel defining layer defines a plurality of sub-pixel regions, and a reflection structure is disposed around the sub-pixel regions. The reflection region can reflect the light which is emitted by the organic light-emitting layer and s located outside an emergent cone, and enables at least a part of light to enter the emergent cone. According to the technical scheme of the invention, the luminous efficiency of the OLED display device can be improved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to an OLED display substrate, a manufacturing method thereof, and a display device. Background technique [0002] The film layers constituting the OLED (Organic Electroluminescence Diode) device include organic light emitting (organic Electroluminescence, OEL) layer, transparent electrode, substrate and other material film layers, and the refractive index of these film layers is higher than that of air. Due to the total reflection, only the part of the light emitted by the organic light-emitting layer whose incident angle is smaller than the total reflection angle at each interface in the set light-emitting direction can directly exit. A certain luminous point (or secondary light source point) can form a cone with the direction angle of the light emitted through the interface of each film layer, which is called the escape cone. In the bottom emission (Bottom Emission, BE) mode OLE...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L51/52H01L27/32H01L51/56
CPCH10K59/122H10K50/856H10K71/00H10K59/1201
Inventor 皇甫鲁江樊星王丹许晓伟李良坚
Owner BOE TECH GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap