Substrate polishing method, top ring, and substrate polishing apparatus
A grinding method and technology of a grinding device, applied in the direction of grinding devices, grinding machine tools, grinding heads, etc., can solve problems such as improving the vacuum degree of the diaphragm
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no. 1 approach
[0063] figure 1 It is a schematic plan view of the substrate processing apparatus. This substrate processing device is used for semiconductor wafers with a diameter of 300mm or 450mm, flat panels, CMOS (Complementary Metal Oxide Semiconductor, Complementary Metal Oxide Semiconductor), CCD (Charge Coupled Device, Charge Coupled Device) and other image sensors, MRAM (Magnetic Random Access Memory, Various substrates are processed in the manufacturing process of the magnetic film of Magnetoresistive Random Access Memory).
[0064] The substrate processing apparatus includes: a substantially rectangular housing 100; a loading unit 200 for loading a substrate cassette storing many substrates; figure 1 In the shown mode, there are 4) substrate grinding devices 300; 1 or more (in figure 1 In the illustrated form, there are two) a substrate cleaning device 400 ; a substrate drying device 500 ; transport mechanisms 600 a to 600 d ; and a control unit 700 .
[0065] The loader 200 is...
no. 2 approach
[0112] The above-mentioned first embodiment is an embodiment in which the adsorption range is widened at the time of lift-off. However, depending on the circumstances, the substrate may be deformed by widening the adsorption range, and pressure may be applied to the substrate.
[0113] Figure 11 It is a graph measuring the amount of deformation of the substrate at the time of lift-off when the adsorption range is widened. Should Figure 11 It is a graph measured on a 300 mm substrate, the horizontal axis represents the position on the substrate, and the vertical axis represents the amount of deformation (however, the polishing pad 3a side, that is, the downward direction, is positive). As shown in the figure, the outer periphery of the substrate is greatly deformed. In addition, deformation occurred on the outside from a position approximately 100 mm from the center of the substrate, and pressure was applied to this position.
[0114] Therefore, in the second embodiment d...
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