Semiconductor device and manufacturing method thereof
A technology of semiconductors and devices, applied in the field of semiconductor devices, can solve problems such as inability to balance conduction characteristics and withstand voltage characteristics
Inactive Publication Date: 2017-10-03
PEKING UNIV +2
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Problems solved by technology
[0004] The present invention provides a semiconductor device and a manufacturing method, which are used to solve the problem that the existing GaN high-mobility transistors cannot balance conduction characteristics and withstand voltage characteristics
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Embodiment Construction
[0025] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. For convenience of description, the sizes of different layers and regions are enlarged or reduced, so the sizes and ratios shown in the drawings do not necessarily represent actual sizes, nor do they reflect the proportional relationship of sizes.
[0026] figure 1 A schematic cross-sectional structure diagram of a semiconductor device provided in Embodiment 1 of the present invention, such as figure 1 As shown, the device includes: a substrate 11, a gallium nitride (GaN) layer 12 on the substrate 11, an aluminum gallium nitride (AlGaN) layer 13 on the GaN layer 12, a gate contact hole 141, Dielectric layer 14, gate 15, source 16, and drain 17 of source contact...
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The invention provides a semiconductor device and a manufacturing method thereof. The manufacturing method comprises the step of sequentially laminating a GaN layer, an AlGaN layer and a dielectric layer on a substrate, wherein a grid contact hole, a source contact hole and a drain contact hole are formed in the dielectric layer, the grid contact hole is arranged between the source contact hole and the drain contact hole, a groove is formed in the AlGaN layer and communicates with the grid contact hole, the groove is arranged below the grid contact hole and is near to one side of the source contact hole, the width of the groove is smaller than the width of the grid contact hole by a half, the depth of the groove is smaller than the thickness of the AlGaN layer, a source and a drain respectively comprises a first metal layer for filling the source contact hole or the drain contact hole, and a grid comprises a second metal layer for filling the groove and the grid contact hole. With the scheme provided by the invention, the positive conduction characteristic and the reverse pressure resistance of the device can be optimized.
Description
technical field [0001] The invention relates to the field of semiconductor devices, in particular to a semiconductor device and a manufacturing method. Background technique [0002] Power devices featuring low power consumption and high speed have recently attracted a lot of attention as the need for efficient and complete power conversion circuits and systems has increased. Gallium nitride (GaN) is a third-generation wide-bandgap semiconductor material, because of its large bandgap (3.4eV), high electron saturation rate (2×10 7 cm / s), high breakdown electric field (1×10 10 --3×10 10 V / cm), high thermal conductivity, corrosion resistance and radiation resistance, have strong advantages in high pressure, high frequency, high temperature, high power and radiation resistance environmental conditions, it is considered to be the research of short-wave optoelectronic devices and high voltage high voltage The best material for frequency high power devices. [0003] In particula...
Claims
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IPC IPC(8): H01L29/778H01L29/423H01L21/335
CPCH01L29/42316H01L29/66462H01L29/7787
Inventor 刘美华孙辉林信南陈建国
Owner PEKING UNIV