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Thin-film transistor, manufacturing method thereof, array substrate and display device

A technology of thin film transistors and manufacturing methods, applied in the direction of transistors, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problems of limiting the application of low-temperature polysilicon films and high leakage currents, and achieve reduced leakage currents, increased potential differences, and improved electrical properties. performance effect

Pending Publication Date: 2017-10-20
BOE TECH GRP CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the low-temperature polysilicon film generally exhibits a high leakage current due to a large number of defects in the film, which limits the application of the low-temperature polysilicon film in the display field

Method used

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  • Thin-film transistor, manufacturing method thereof, array substrate and display device
  • Thin-film transistor, manufacturing method thereof, array substrate and display device
  • Thin-film transistor, manufacturing method thereof, array substrate and display device

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Embodiment Construction

[0030] In order to make the purpose, technical solutions and points of the embodiments of the present invention more clear, the present invention will be further described below in conjunction with the accompanying drawings and exemplary embodiments. Obviously, the described embodiments are part of the embodiments of the present invention, not all Example. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention. It should be noted that the same reference numerals in the drawings all refer to the same components. Also, detailed descriptions of known arts will be omitted if they are unnecessary to illustrate the features of the present invention.

[0031] A schematic diagram of a partial structure of a thin film transistor provided by the present invention is as follows: figure 1 As shown, the active layer of the thin film transis...

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Abstract

The invention relates to a thin-film transistor, a manufacturing method thereof, an array substrate and a display device. The active layer of the thin-film transistor includes a channel region, a source region and a drain region. The source region and the drain region are disposed on both sides of the channel region respectively. The channel region includes a polycrystalline silicon structure doped with elements in group five. By doping the elements in the group five, a potential difference is increased between the source region and the drain region so as to reduce PN junction leakage current formed between source and drain polycrystalline silicon and the channel region, and to improve the electrical performance of a transistor.

Description

【Technical field】 [0001] The invention relates to the field of thin film transistor manufacturing technology and display technology, in particular to a thin film transistor and its manufacturing method, an array substrate and a display device. 【Background technique】 [0002] In recent years, with the continuous development of polycrystalline silicon thin-film transistor (polycrystalline silion thin-film transistor) technology, its application has become more and more extensive, especially the low temperature poly-silicon thin film transistor (LTPS TFT for short). , due to its high response speed, high aperture ratio, high brightness and other advantages, it is more and more favored by the market, and it can also be applied to the field of flexible displays and organic light-emitting diode displays. However, the low temperature polysilicon film generally exhibits a high leakage current due to a large number of defects in the film, which limits the application of the low tempe...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/10H01L29/786H01L21/336H01L27/12
CPCH01L27/1222H01L29/0684H01L29/1033H01L29/66757H01L29/78675H01L29/78603H01L21/02532H01L21/02592H01L21/0262H01L21/02667H01L29/167
Inventor 王利忠周天民温钰
Owner BOE TECH GRP CO LTD
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