Method of manufacturing semiconductor device and substrate processing device
A manufacturing method and semiconductor technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of reduced signal propagation speed and increased capacitance between wirings, etc., and achieve the effect of good characteristics
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no. 1 approach
[0031] The first embodiment of the present invention will be described below.
[0032] use figure 1 One step of the manufacturing process of the semiconductor device will be described.
[0033] (Wiring layer forming step S101)
[0034] The wiring layer forming step S101 will be described.
[0035] Regarding the wiring layer forming step S101, use figure 2 Be explained. figure 2 It is a diagram explaining the formation of the wiring layer 2006 of the semiconductor wafer 200 . A wiring layer 2006 is formed over the insulating film 2001 . Below the insulating film 2001, there is an electrode layer (not shown), and structures such as a gate electrode and an anode are provided in the electrode layer. The insulating film 2001 is used as an interlayer insulating film insulating from the electrode layer.
[0036] The insulating film 2001 is, for example, a porous carbon-containing silicon film (SiOC film). An inter-wiring insulating film 2002 is formed over the insulating fi...
no. 2 approach
[0148] Next, a second embodiment will be described.
[0149] The second embodiment differs from the first embodiment mainly in the following points. The first difference is that the second gas is different. The second difference is that the process of forming the second diffusion prevention film is different.
[0150] Below, use Figure 11 to Figure 13 , a specific example will be described focusing on the differences from the first embodiment. In addition, the description of the same content as the first embodiment will be omitted.
[0151] In this implementation process, to target Figure 4 (B) removed the wafer 200 of the resist layer 2008 state, such as Figure 11 The purpose of forming the second interlayer insulating film 2015 is as shown in (B).
[0152] Figure 11 With Figure 5 Quite a graph. Here, in the second diffusion prevention film forming step S104 of the present embodiment, the Figure 4 The wafer 200 in the state of removing the resist layer is proc...
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