Unlock instant, AI-driven research and patent intelligence for your innovation.

Photolithographic processing method of micro-nano device

A lithographic processing and micro-nano technology, applied in the field of manufacturing and processing, can solve the problems of large alignment errors and difficult detection of lithographic mark angle deviations, and achieve the effect of reducing lithographic alignment errors and facilitating search

Active Publication Date: 2019-11-26
NAT INST OF METROLOGY CHINA
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Generally speaking, during the alignment process of photolithographic marks, it is judged by naked eyes. When the photolithographic marks have some angular deviations, it is difficult to find, which in turn causes large alignment errors.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photolithographic processing method of micro-nano device
  • Photolithographic processing method of micro-nano device
  • Photolithographic processing method of micro-nano device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] The technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0018] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a micro / nano device photolithography processing method which comprises the following steps: making a first photolithography mark on a first layer template; attaching the first layer template to a sample of a to-be-processed micro / nano device for performing exposure and development; making a second photolithography mark on the first layer template; matching a segment spacing of the second photolithography mark with a segment of the first photolithography mark, and matching the segment spacing of the first photolithography mark with a segment of the second photolithography mark; attaching a second layer template onto the sample of the to-be-processed micro / nano device, so that the segment of the first photolithography mark is positioned on the segment spacing of the second photolithography mark, and the segment of the second photolithography mark is positioned on the segment spacing of the first photolithography mark; performing exposure and development on the sample of the to-be-processed micro / nano device attached to the second layer template. According to the manner, searching of the photolithography mark is facilitated, and the alignment state of the whole version can be conveniently checked by observation along the segment, so that the photolithography alignment error is reduced.

Description

technical field [0001] The invention relates to the field of manufacturing and processing, in particular to a photolithographic processing method for micro-nano devices. Background technique [0002] Photolithography plays an important role in the field of micro-nano device manufacturing. In the prior art, please refer to figure 1 , during photolithography processing, usually use squares or crosses to make photolithographic marks on the processing template, and then align and align the photolithographic marks on template B with the photolithographic marks on template A, so as to To realize the alignment exposure and development of circuit patterns of different processing templates. [0003] In the prior art, the alignment marks used in lithography often need to be searched for a long time under the microscope of the lithography equipment, which requires strict alignment of the lithography marks on different plate layers. Only after these plate layers are aligned can the v...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20G03F9/00
CPCG03F7/70216G03F9/7003G03F9/7046
Inventor 曹文会李劲劲钟源钟青王雪深
Owner NAT INST OF METROLOGY CHINA