Unlock instant, AI-driven research and patent intelligence for your innovation.

Plasma source assembly

A technology of plasma source and components, applied in the field of plasma source components

Active Publication Date: 2017-11-10
APPLIED MATERIALS INC
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Gas inlets allow airflow to travel along the flow path to pass through the housing and out the front

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Plasma source assembly
  • Plasma source assembly
  • Plasma source assembly

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] Embodiments of the present disclosure provide a substrate processing system for continuous substrate deposition to maximize throughput and improve processing efficiency. The substrate processing system can also be used for pre- and post-deposition plasma treatments.

[0026] As used in this specification and the appended claims, the terms "substrate" and "wafer" are used interchangeably, and both refer to a surface or portion of a surface upon which a process acts. Those skilled in the art will appreciate that reference to a substrate may also refer to only a portion of a substrate, unless the context clearly dictates otherwise. Additionally, reference to depositing on a substrate may refer to both a bare substrate and a substrate having one or more films or features deposited or formed thereon.

[0027] As used in this specification and the appended claims, the terms "reactive gas," "precursor," "reactant," and the like are used interchangeably to denote a gas that in...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
heightaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

Disclosed is a plasma source assembly comprising: a housing having a gas inlet and a front face; an RF hot electrode within the housing, the RF hot electrode having a first surface and a second surface, the second surface opposite the first surface and defining the thickness of the RF hot electrode; a first return electrode within the housing, the first return electrode having a first surface spaced from the first surface of the RF hot electrode to form a first gap; and a second return electrode within the housing, the second return electrode having a first surface spaced from the second surface of the RF hot electrode to form a second gap, so that the second gap is on an opposite side of the RF hot electrode relative to the first gap.

Description

[0001] This application is submitted on November 18, 2016, the application number is "201611028706.4", the priority date is "November 20, 2015", and the invention name is "transverse plasma / free radical source". case application. technical field [0002] Embodiments of the present disclosure generally relate to an apparatus for processing a substrate. More specifically, embodiments of the present disclosure relate to modular capacitively coupled plasma sources for use with processing chambers such as batch processors. Background technique [0003] Formation of semiconductor devices is often performed in a substrate processing platform that includes multiple chambers. In some cases, the purpose of a multi-chamber processing platform or cluster tool is to sequentially perform one or more processes on a substrate in a controlled environment. In other cases, however, a multi-chamber processing platform may only perform a single processing step on a substrate; the additional ch...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455H01J37/32H01L21/02H01L21/285H01L21/687
CPCC23C16/45536C23C16/45548C23C16/45551C23C16/505H01J37/32H01J37/32091H01J37/3244H01L21/0228H01L21/0234H01L21/28556H01L21/68764H01L21/68771H01L21/68785A61K31/343A61P35/00H01J37/32082H01J37/32449H01J37/32541H01J37/32568H01J37/32532G01N33/5011G01N2510/00
Inventor A·K·萨布莱曼尼K·甘加基德加A·乔杜里J·C·福斯特N·南塔瓦拉努K·贝拉P·A·克劳斯F·豪斯曼
Owner APPLIED MATERIALS INC