A kind of Gaas semiconductor surface ohmic contact electrode and its manufacturing method

Abstract

The invention discloses a GaAs semiconductor surface ohmic contact electrode and a manufacturing method thereof. The manufacturing method comprises the steps of firstly fabricating a contact electrode at the surface of a GaAs semiconductor, then sequentially forming a Cu layer and an Au layer on a quartz substrate, packaging the Au layer on the quartz substrate and a contact layer of the contact electrode on the GaAs together through annealing and bonding, and then removing the quartz substrate through polishing to obtain a GaAs ohmic contact electrode. According to the invention, a gold layer is manufactured by taking the copper layer on the quartz substrate as a transition layer, so that a problem that the gold layer and the quartz substrate are difficult to be bonded is overcome, a separate support for the thickened gold layer is completed, and a problem that a easy bonding gold layer with micron thickness is difficult to be prepared according to methods of magnetron sputtering and vacuum evaporation is overcome. Therefore, the thickened gold layer is fabricated independently by using an electroplating method. The GaAs contact electrode manufactured according to the method can be easily bonded to a circuit to test and use, the device can operate at a higher temperature, and better device performance can be obtained.

Description

technical field [0001] The invention belongs to the field of electrode contact preparation, and in particular relates to a GaAs semiconductor surface ohmic contact electrode and a manufacturing method thereof. Background technique [0002] Photoconductive Semiconductor switch (PCSS) is gradually replacing the spark gap, Traditional switches such as thyratrons and vacuum tubes are widely used in the field of pulse power. [0003] However, the Au / Ge / Ni alloy ohmic contact electrodes commonly used in GaAs photoconductive switches, under high-frequency switching, heat accumulation will lead to degradation of the ohmic contact performance of the device, and even lead to switch failure. less than the 10 6 Second-rate. Since the use of the device must be bonded to the external circuit by wire, the ohmic contact electrode produced has good characteristics, but the metal layer of tens of nanometers is difficult to bond to the external circuit, or it is very easy to be bonded to th...

AI Technical Summary

Problems solved by technology

[0003] However, the Au / Ge / Ni alloy ohmic contact electrode commonly used in GaAs photoconductive switches, under high-frequency switching, heat accumulation will lead to degradation of the ohmic contact performance of the device, and even lead to switch failure, and its service life is only thousands of times, far reaching less than the 10 6 Second-rate

Since the use of the device must be bonded to the external circuit by wire, the ohmic contact electrode produced has good characteristics, but the metal layer of tens of nanometers is difficult to bond to the external circuit, or it is very easy to be bonded to the external circuit during operation. Electrodes are punctured, leading to device performance degradation

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