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Piezoresistive sensor based on nanowire as isolation layer and preparation method thereof

A nanowire and isolation layer technology, applied in the field of nanomaterials, can solve the problems of not being able to guarantee two layers of active materials at the same time, and achieve the effects of good contact, high sensitivity, and simple process

Active Publication Date: 2019-09-13
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Aiming at the above defects or improvement needs of the prior art, the present invention provides a piezoresistive sensor based on nanowires as an isolation layer and its preparation method, thereby solving the existing problems in the prior art that cannot ensure that the two layers of active materials can be well Technical issues that are in touch and can respond greatly to external pressure

Method used

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  • Piezoresistive sensor based on nanowire as isolation layer and preparation method thereof
  • Piezoresistive sensor based on nanowire as isolation layer and preparation method thereof
  • Piezoresistive sensor based on nanowire as isolation layer and preparation method thereof

Examples

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Embodiment 1

[0056] A method for preparing a piezoresistive sensor based on nanowires as an isolation layer, comprising:

[0057] (1) Polyvinyl alcohol nanowires were used as an isolation layer, and polyvinyl alcohol nanowires (PVANW) were electrospun on a flat PET / ITO sheet, and the electrospinning time was 0.5 min;

[0058] (2) Using electrochemical deposition of pyrrole monomer to obtain a layered polypyrrole (PPy) film with wrinkled surface, the uneven side of the polypyrrole film is in contact with the PET / ITO sheet spun with polyvinyl alcohol nanowires to form a pressed film. Resistive sensors such as image 3 shown.

[0059] Fig. 4 (a) is the positive SEM figure of the polypyrrole film that the embodiment of the present invention 1 provides; Fig. 4 (b) is the reverse SEM figure of the polypyrrole film that the embodiment of the present invention 1 provides; Fig. 4 (c) is the present invention The cross-sectional SEM figure of the polypyrrole film that embodiment 1 provides; It can...

Embodiment 2

[0063] A method for preparing a piezoresistive sensor based on nanowires as an isolation layer, comprising:

[0064] (1) Polyvinyl alcohol nanowires were used as an isolation layer, and polyvinyl alcohol nanowires (PVANW) were electrospun on a flat PET / ITO sheet, and the electrospinning time was 1 min;

[0065] (2) Using electrochemical deposition of pyrrole monomer to obtain a layered polypyrrole (PPy) film with wrinkled surface, the uneven side of the polypyrrole film is in contact with the PET / ITO sheet spun with polyvinyl alcohol nanowires to form a pressed film. resistive sensor.

[0066] Figure 6(b) is the SEM image of the polyvinyl alcohol nanowires provided by Example 2 of the present invention when the electrospinning time is 1 minute; it can be seen that the density of the polyvinyl alcohol nanowires is just right when the electrospinning time is 1 minute.

Embodiment 3

[0068] A method for preparing a piezoresistive sensor based on nanowires as an isolation layer, comprising:

[0069] (1) Polyvinyl alcohol nanowires were used as an isolation layer, and polyvinyl alcohol nanowires (PVANW) were electrospun on a flat PET / ITO sheet, and the electrospinning time was 2 minutes;

[0070] (2) Using electrochemical deposition of pyrrole monomer to obtain a layered polypyrrole (PPy) film with surface wrinkles, the relatively uneven side of the polypyrrole film is in contact with a PET / ITO sheet spun with polyvinyl alcohol nanowires to form a pressed film. resistive sensor.

[0071] Figure 6(c) is the SEM image of the polyvinyl alcohol nanowires provided by Example 3 of the present invention when the electrospinning time is 2 minutes; it can be seen that the density of the polyvinyl alcohol nanowires is higher when the electrospinning time is 2 minutes.

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Abstract

The invention discloses a piezoresistive sensor based on a nano wire as a separating layer and a manufacturing method therefor. The piezoresistive sensor comprises an electric conduction substrate, the separating layer and an electric conduction polymer film, wherein the nano wire is used as the separating layer, a microscopic nano wire network structure is used for regulating and controlling electric contract of macroscopic material, good contact between two layers of active material can be ensured, great response to external pressure can be made, the nano wire is used as the separating layer, and the nano meter is electrically spun on the flat electric conduction substrate; an uneven face of the electric conduction polymer film is brought into contact with the electric conduction substrate on which the nano wire is spun, a high sensitivity piezoresistive sensor is formed, and the manufacturing method disclosed in the invention is simple and low in cost.

Description

technical field [0001] The invention belongs to the field of nanomaterials, and more specifically relates to a piezoresistive sensor based on nanowires as an isolation layer and a preparation method thereof. Background technique [0002] When subjected to an external force, it is the working principle of the piezoresistive sensor to convert the resistance change accompanying the internal mechanical deformation of the device into a displayable current change. Due to the advantages of simple structure, low cost and easy signal acquisition of piezoresistive sensor devices, it shows great application prospects in many fields such as wearable electronic devices, human-machine interface and electronic skin. Sensitivity, that is, how quickly relative resistance or relative current intensity changes with external pressure, is a crucial performance parameter of piezoresistive sensors, and improving sensitivity is one of the keys to obtaining high-performance piezoresistive sensors. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01L1/22G01L9/04B82Y40/00B82Y15/00
Inventor 高义华刘逆霜罗成
Owner HUAZHONG UNIV OF SCI & TECH