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Resist stripping solution and resist stripping method

A technology of resist and stripping solution, applied in the field of resist stripping solution and resist stripping, to achieve the effect of less re-adhesion, excellent defoaming and excellent stripping.

Active Publication Date: 2019-07-09
NAGASE CHEMTEX CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the composition described in Patent Document 1 is used to peel off a resist on a base material having a metal wiring and / or a metal oxide film, there is a problem that the resist that has been peeled off once will be removed again. Adhesion to substrates with metal wiring and / or metal oxide films

Method used

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  • Resist stripping solution and resist stripping method
  • Resist stripping solution and resist stripping method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～14

[0087] (Examples 1 to 14, Comparative Examples 1 to 11)

[0088] Components (A) to (D) were mixed so that the weight ratios shown in Tables 1 and 2 might be obtained to obtain a resist stripping solution. With respect to the obtained resist stripping liquid, the re-adhesion amount, the peeling property, and the defoaming property were evaluated by the following methods. The results are shown in Table 1 and Table 2. In addition, with respect to Examples 6, 8, 10, 11, 13, and 14, and Comparative Examples 9 to 11, the re-adhesion amount with respect to IGZO was not evaluated. In addition, about Examples 2, 4, 5, 7, 9, 10, 12, and Comparative Examples 1 and 2, peelability was not evaluated. In addition, about Example 13, 14, and Comparative Examples 7-11, the defoaming property was not evaluated. In addition, the viscosity of Example 1 was high, and workability|operativity was difficult.

[0089] [Table 1]

[0090]

[0091] [Table 2]

[0092]

[0093] 3. Evaluation met...

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PUM

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Abstract

The objective of the invention is to provide a resist peeling liquid and a peeling method of the resist. The peeling liquid is used for peeling resist from a metal wire harness and / or a metal oxide film. The peeling performance of the peeling liquid is excellent, the re-adhesion quantity of the peeled resist is less and the defoaming performance is excellent. The peeling liquid is characterized by containing (A) amine, (B) organic solvent and (C) sulfonic acids or carboxylic acids with the weight-average molecular weight of 5000-1000000 or the salt thereof. The contents of the C components are 5.0 weight% or less and the contents without containing (D) water or containing (D) water and (D) components are 60 weight% or less.

Description

technical field [0001] The present invention relates to a resist stripping solution and a resist stripping method. Background technique [0002] A semiconductor substrate or the like has an electrode structure in which fine wiring is applied, and a resist is used in the manufacturing process thereof. Regarding a thin film transistor (TFT), an electrode structure in which an oxide semiconductor film such as IGZO and a metal wiring such as copper are combined is known. The electrode structure is produced, for example, by coating a resist on a metal wiring such as copper or an oxide semiconductor film such as IGZO formed on a substrate, exposing and developing the resist to form a resist pattern, and applying the resist. The etchant pattern is used as a mask, and the conductive metal layer, the oxide semiconductor film, etc. are etched, and then the unnecessary resist is removed with a resist stripping solution, thereby manufacturing. [0003] For example, Patent Document 1 p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/42
CPCG03F7/426
Inventor 向喜广
Owner NAGASE CHEMTEX CORPORATION