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3D flash memory device having different dummy word lines and data storage devices including same

A technology of memory devices and pseudo memory cells, which can be used in static memory, read-only memory, information storage, etc., and can solve problems such as increasing programming interference effects.

Active Publication Date: 2017-11-24
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the use of 3D flash memory inevitably involves the problem of increased program disturb effects

Method used

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  • 3D flash memory device having different dummy word lines and data storage devices including same
  • 3D flash memory device having different dummy word lines and data storage devices including same
  • 3D flash memory device having different dummy word lines and data storage devices including same

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Embodiment Construction

[0028] Embodiments of the inventive concept will now be described in some additional detail with reference to the accompanying drawings. However, the inventive concept may be embodied in many different forms and should not be construed as limited to the illustrated embodiments. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the inventive concept to those skilled in the art. Throughout the written specification and drawings, the same reference numerals and signs are used to refer to the same or similar elements.

[0029] figure 1 is a generalized block diagram illustrating a storage device according to some embodiments of the inventive concept. refer to figure 1 , the data storage device 1000 includes a flash memory 1100 and a storage controller 1200 . In the following description, it is assumed that the data storage apparatus 1000 is realized by at least one data storage medium (for example, ...

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Abstract

The invention relates to a 3Dflash memory device having different dummy word lines and data storage devices including same. The three-dimensional (3D) flash memory includes a first dummy word line disposed between a ground select line and a lowermost main word line, and a second dummy word line of different word line configuration disposed between a string select line and an upper most main word line.

Description

[0001] This application is a divisional application of an invention patent application with an application date of May 9, 2014, an application number of "201410195246.9", and an invention title of "Three-dimensional flash memory device and data storage device with different dummy word lines". [0002] This application claims priority from Korean Patent Application No. 10-2013-0053212 filed with the Korean Intellectual Property Office on May 10, 2013, the subject matter of which is incorporated herein by reference. technical field [0003] The inventive concept relates generally to semiconductor memory devices, and more particularly, to three-dimensional (3D) flash memory devices and data storage devices including 3D flash memory devices. Background technique [0004] Continuous integration of flash memory provides the superior performance and cost competitiveness required by contemporary users. There is a limit to the increased integration level that can be achieved by flash...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/04G11C16/16G11C16/34
CPCG11C16/0483G11C16/16G11C16/3427G11C16/02H01L21/823487H01L29/7926H10B43/20H10B43/27G11C16/08G11C16/10
Inventor 南尚完朴起台
Owner SAMSUNG ELECTRONICS CO LTD