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Fabrication method of metal breakpoint nanowire array with variable diameter and wire array thereof

A nanowire array and metal technology, which is applied in the fields of nanostructure manufacturing, nanotechnology, nanotechnology, etc., can solve the problems of difficulty in preparing an array of metal inflection point nanowires in orderly arrangement, easily damaged metal nanowires, and inability to bend.

Active Publication Date: 2018-03-16
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Template-assisted methods such as porous alumina template method and polymer membrane template method are easy to damage metal nanowires during template removal; soft template method is complicated in experimental process, easy to pollute the environment, and usually requires complex and expensive equipment, resulting in a sharp increase in cost ; The external field induction method is limited to the preparation of magnetic metal nanowires
Moreover, the existing preparation methods are difficult to prepare an orderly array of metal nanowires with inflection points. The existing prepared metal nanowires are distributed in a non-array and cannot be bent, making microelectronic devices, microfluidic devices, sensors, etc. Technological development is constrained

Method used

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  • Fabrication method of metal breakpoint nanowire array with variable diameter and wire array thereof
  • Fabrication method of metal breakpoint nanowire array with variable diameter and wire array thereof
  • Fabrication method of metal breakpoint nanowire array with variable diameter and wire array thereof

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Embodiment 1

[0067] The preparation method of the metal breakpoint nanowire array with variable diameter in this embodiment includes the following steps:

[0068] Step 1. According to the pore size requirements of N-level curved micropores (N=1, 2, ..., M, M is the target number of poles), prepare N-level core-shell nanosphere suspension in which silicon dioxide layer 11 wraps precious metal particles 12 liquid, such as figure 1 shown, and the N-level core-shell nanosphere suspension is spin-coated on the upper surface of the workpiece 2 to be processed, the workpiece 2 is a semiconductor material, and the N in the N-level core-shell nanosphere suspension High-level core-shell nanospheres form a monolayer ordered dense arrangement on the surface of the workpiece through self-assembly, such as image 3 As shown, the preprocessed workpiece is obtained, and the noble metal particle of the N-level core-shell nanosphere has a diameter equal to the aperture size of the N-level curved micropore;...

Embodiment 2

[0100] The preparation method of the nanowire array with tertiary metal breakpoints in this embodiment is as follows:

[0101] Step 1: First, select a silicon wafer with a size of 25mm×25mm×0.5mm (length*width*thickness) as the workpiece 2, and put the workpiece 2 into ethanol and deionized water for 30 minutes for ultrasonic cleaning respectively, and then wash the concentrated sulfuric acid Heat the mixed solution with hydrogen peroxide to 120°C, put the ultrasonically cleaned workpiece 2 into it and soak for 20 minutes, rinse repeatedly to remove the acidic substances after soaking, and then put the workpiece 2 into a 60°C cleaning solution made of ammonia, hydrogen peroxide and water. Soak in the solution for 20 minutes, take it out, rinse it repeatedly with deionized water, and then dry it with nitrogen to remove oxides on the surface of the workpiece 2, and finally obtain a clean workpiece 2 with good hydrophilicity.

[0102] Step 2: prepare the first-grade core-shell na...

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Abstract

The invention discloses a preparation method and a line array of a metal breakpoint nanowire array with a variable diameter. The preparation method comprises the following steps: preparing a N-grade core-shell nanosphere suspension with silica layer coated noble metal particles according to the requirement of the pore size of an N-grade bending micropore, preparing an N-grade etching liquid according to a required bending angle of the N-grade bending micropore, placing a preprocessing workpiece mentioned in a step 1 into the N-grade etching liquid, carrying out etching, and allowing the workpiece to form M-grade bending micropores so as to form a stepped bending pore array in the workpiece; and allowing an electroplating liquid to electroplating target metal from the bottom part of the stepped bending pore array along bending pore channels under the action of the centrifugal force of a centrifugal workbench so as to form the metal breakpoint nanowire array. According to the invention, the distance and the pore size of a stepped bending pore are controlled through the thickness of the silica layer located at the middle and the outer layers of a core-shell nanosphere and the particle size of a noble metal particle located in the interior of the core-shell nanosphere, so more sophisticated and bending-angle-adjustable stepped bending pores are formed; and through a centrifugal electroplating way, a gap located at the position of bending is avoided from generation, and the molding rate of electroplating is improved.

Description

technical field [0001] The invention relates to the field of nano-device processing, in particular to a method for preparing a variable-diameter metal inflection-point nanowire array and the wire array. Background technique [0002] Metal nanowires have properties such as quantum size effect, surface effect, quantum tunneling effect, and dielectric confinement effect, which will cause them to exhibit macroscopic properties such as light, heat, electricity, magnetism, and force that are different from conventional bulk materials. It has broad application prospects in microelectronic devices, microfluidic devices, sensors, etc. At present, the methods for preparing metal nanowire arrays mainly include: porous alumina template method (AAO membrane), polymer membrane template method, soft template method and external field induction method, etc. Template-assisted methods such as porous alumina template method and polymer membrane template method are easy to damage metal nanowir...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B82B3/00B82B1/00B82Y40/00
CPCB82B1/00B82B3/0014B82Y40/00
Inventor 陈云陈新刘强高健高波
Owner GUANGDONG UNIV OF TECH