Fabrication method of local oxidation of silicon isolation device
A silicon oxidation and partial technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as leakage and affect device performance, and achieve the effect of preventing leakage and avoiding accumulation
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[0052] According to the above research, the inventor proposes the present invention. The core idea of the present invention is to provide a method for preparing a partial silicon oxidation isolation device, such as figure 1 shown, including:
[0053] Step S11, providing a substrate;
[0054] Step S12, forming local silicon oxide isolation in the substrate;
[0055] Step S13, forming a deep well in the substrate with the partial silicon oxide isolation; and
[0056] Step S14 , forming a diffusion well in the deep well.
[0057] Since the local silicon oxidation isolation is formed before the deep well is prepared, it can effectively prevent implanted elements (such as phosphorus) from separating out from the local silicon oxidation isolation during the preparation of the deep well, thereby avoiding the implantation of elements (such as Phosphorus) is enriched on the contact surface between the substrate and the local silicon oxidation isolation, preventing electric leakage...
no. 1 example
[0064] see Figure 2-Figure 11 The first embodiment of the present invention is specifically described, wherein, Figure 2-Figure 11 It is a structural schematic diagram during the preparation process of the method for preparing the partial silicon oxidation isolation device according to the first embodiment of the present invention.
[0065] First go to step S11, such as figure 2 As shown, a substrate 100 is provided. In this embodiment, the substrate 100 is a silicon substrate, that is, the material of the substrate 100 is silicon, for example, the substrate 100 is monocrystalline silicon or silicon-on-insulator wait.
[0066] Then proceed to step S12 , forming local silicon oxide isolation in the substrate 100 . Preferably, the step S12 includes substeps S121 to S123:
[0067] Substep S121, such as figure 2 As shown, a first barrier layer 101 is formed on the substrate 100. The material of the first barrier layer 101 can be silicon nitride or the like. Generally, bet...
no. 2 example
[0082] In order to avoid the precipitation of implanted elements (such as phosphorus elements) into the gate oxide layer when forming the gate oxide layer, and further improve the uniformity of the distribution of implanted elements (such as phosphorus elements), the inventors proposed this embodiment, that is, when forming a deep Before the well step, a gate oxide layer is formed on the surface of the part of the substrate other than the local silicon oxidation isolation, then when the gate oxide layer is formed at a high temperature, no element (such as phosphorus element) is implanted in the substrate, and there will be no The implanted element (such as phosphorus element) is enriched on the surface of the substrate, and then formed in the deep well.
[0083] See below Figure 12-Figure 18 Specifically describe the second embodiment of the present invention, wherein, Figure 12-Figure 18 It is a structural schematic diagram during the preparation process of the method for ...
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