Antifouling substrate and preparation method thereof
A substrate and antifouling technology, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve problems such as poor surface wear resistance, poor sample surface wear resistance, and difficulty in maintaining the original morphology of the sample surface. Large investment in equipment, poor surface wear resistance, and difficulty in light interference and reflection
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[0050] attached figure 1 It is a flowchart of an embodiment of the preparation method of the anti-fouling substrate of the present invention, specifically, the preparation method of the anti-fouling substrate of the present invention includes the following steps:
[0051] (1), plate a layer of the first inorganic oxide layer on the substrate surface after cleaning;
[0052] (2), forming a metal layer or a second inorganic oxide layer on the surface of the first oxide layer;
[0053] (3) heat-treating the substrate with the metal layer or the second inorganic oxide layer obtained in step (2) to obtain a substrate with metal particles or second inorganic oxide particles;
[0054] (4), the base that step (3) gained has metal particles or the second inorganic oxide particles is etched for the first time, and then the substrate template after etching is cleaned, and has the first inorganic oxide boss 1 base;
[0055] (5), performing a second etching on the first inorganic oxide ...
Embodiment 1
[0060] An embodiment of the antifouling substrate of the present invention, the base material of the antifouling substrate is silicon dioxide, the coating is perfluorodecyltriethoxysilane, the average height of the boss is 80nm, and the convex The average diameter of the mesas is 100 nm, and the ratio of the average diameter of the mesas to the average spacing between adjacent mesas is 4.
[0061] The preparation method of the antifouling substrate described in this embodiment comprises the following steps:
[0062] (1) Clean the substrate with a cleaning agent, then clean it with ultrasonic waves for 5 minutes, and then clean it with deionized water for 2 minutes;
[0063] (2), the first inorganic oxide layer is vapor-deposited on the surface of the substrate, and the process parameters of vapor deposition are: the current is 100mA, and the vacuum degree is 5×10 -3 Pa, the thickness of the first inorganic oxide layer is 200nm;
[0064] (3), evaporate a metal layer on the su...
Embodiment 2
[0072] An embodiment of the antifouling substrate of the present invention, the base material of the antifouling substrate is zirconium dioxide, the coating is perfluorodecyltriethoxysilane, the average height of the boss is 100nm, and the convex The average diameter of the mesas is 120 nm, and the ratio of the average diameter of the mesas to the average spacing between adjacent mesas is 1.2.
[0073] The preparation method of the antifouling substrate described in this embodiment comprises the following steps:
[0074] (1) Clean the substrate with a cleaning agent, then clean it with ultrasonic waves for 5 minutes, and then clean it with deionized water for 2 minutes;
[0075] (2), the first inorganic oxide layer is vapor-deposited on the surface of the substrate, and the process parameters of vapor deposition are: the current is 100mA, and the vacuum degree is 5×10 -3 Pa, the thickness of the first inorganic oxide layer is 150nm;
[0076] (3), evaporate a metal layer on t...
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