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Low temperature redox sintering method based on copper particles

A sintering method and technology of copper particles, which are applied in semiconductor/solid-state device components, semiconductor devices, electrical components, etc., can solve the problems that copper cannot be used, and achieve the elimination of oxidation treatment steps, increased density, and obvious sintered joints Effect

Active Publication Date: 2019-07-09
刘向东
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Obviously, if the low-temperature sintering ability of copper particles cannot be enhanced to improve the strength of copper-sintered interconnects, then low-temperature sintering of copper cannot be applied at all.

Method used

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  • Low temperature redox sintering method based on copper particles
  • Low temperature redox sintering method based on copper particles
  • Low temperature redox sintering method based on copper particles

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Embodiment 1: the low-temperature redox sintering method based on copper particle, comprises the following steps:

[0036] (1), preparation of copper paste: it is formed by mixing flake micron-sized pure copper particles and terpineol solvent, wherein the pure copper particle mass percentage is 85%, such as figure 1 Shown: a is the microstructure diagram of pure copper particles, b is the prepared copper paste;

[0037] (2), assemble the interconnection sample to be sintered, such as image 3 As shown: the above copper paste is printed on the lower substrate by screen printing, the printing thickness is 0.15mm, and then the upper substrate is covered on the copper paste. In this embodiment, the upper and lower substrates are respectively semiconductor chips covered with a surface metal layer and a heat sink substrate, the surface metal layer of which is made of gold material;

[0038] (3) Oxidation sintering: Place the above-mentioned interconnected sample in a hot-pr...

Embodiment 2

[0045] Embodiment 2: The low-temperature oxidation-reduction sintering method based on copper particles comprises the following steps:

[0046] (1), preparation of copper paste: it is formed by mixing flaky micron-sized pure copper particles and ethylene glycol solvent, and the mass percentage of pure copper particles is 80%;

[0047](2), assemble the interconnected sample to be sintered, such as image 3 As shown: the above-mentioned copper paste is printed on the lower substrate by screen printing, the printing thickness is 0.11 mm, and then the upper substrate is covered on the copper paste. In this embodiment, the upper and lower substrates are respectively semiconductor chips covered with a surface metal layer and a heat sink substrate, the surface metal layer of which is made of silver material;

[0048] (3) Oxidation sintering: place the above-mentioned interconnected sample in a hot-pressing device. The hot-pressing device in this embodiment can use the AYUMIINDUSTRY ...

Embodiment 3

[0057] Embodiment 3: the low-temperature redox sintering method based on copper particle, comprises the following steps:

[0058] (1), preparation of copper paste: mixed by granular micron-sized pure copper particles and terpineol solvent, wherein the mass percentage of pure copper particles is 90%;

[0059] (2), assemble the interconnected sample to be sintered, such as image 3 As shown: the above-mentioned copper paste is printed on the lower substrate by screen printing, the printing thickness is 0.05mm, and then the upper substrate is covered on the copper paste. In this embodiment, the upper and lower substrates are respectively semiconductor chips covered with a surface metal layer and a heat sink substrate, the surface metal layer of which is made of copper material;

[0060] (3) Oxidation sintering: place the above-mentioned interconnected sample in a hot-pressing device. The hot-pressing device in this embodiment can use the AYUMIINDUSTRY CO.LTD RB-100D model. No pr...

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Abstract

The invention discloses a low-temperature oxidation-reduction sintering method based on copper particles. The main steps include: preparing copper paste, assembling interconnection samples to be sintered and connected, oxidation sintering, reduction sintering, heat preservation, vacuuming, and nitrogen-filled cooling. Compared with the copper low-temperature sintering connection process that is directly sintered in a reducing atmosphere, the shear strength of the sintered interconnection joint of the present invention has been greatly improved, and the density of the sintered structure has also been improved, and the connection strength has a great influence on the surface condition of the metal layer of the substrate. It is insensitive and shows good adaptability. It is not necessary to perform complex deoxidation film treatment on the substrate before sintering connection, which saves the deoxidation treatment step.

Description

technical field [0001] The invention relates to a power device interconnection process, in particular to a low-temperature redox sintering method based on copper particles. Background technique [0002] With the rapid development of power semiconductor technology and its increasingly broad application prospects, the requirements for the interconnection of power semiconductor devices are getting higher and higher. At present, the typical interconnection process of power devices is to use lead-containing or lead-free solder alloys to connect power semiconductor chips and heat sink substrates through a soldering process. Because the melting point of the brazing alloy is low and the thermal conductivity is low, the reliability of the power electronic equipment using this brazing process will be seriously reduced under the service temperature of high power and high temperature. In addition, the use of lead-containing solder will bring environmental pollution and public health pr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/60H01L23/52
CPCH01L23/52H01L24/03H01L2224/03849H01L2224/03848H01L2224/03505H01L2224/8384
Inventor 刘向东
Owner 刘向东