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Methods for Forming a Semiconductor Device and Semiconductor Devices

A semiconductor and non-semiconductor technology, applied in the field of forming semiconductor devices and semiconductor devices, can solve problems such as lack of optimization and reduced yield

Active Publication Date: 2017-12-29
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A non-optimized attachment in mass production can mean lower yields due to metal peeling or even electrical overstress in electric fields

Method used

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  • Methods for Forming a Semiconductor Device and Semiconductor Devices
  • Methods for Forming a Semiconductor Device and Semiconductor Devices
  • Methods for Forming a Semiconductor Device and Semiconductor Devices

Examples

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Embodiment Construction

[0013] Various example embodiments will now be described more fully with reference to the accompanying drawings, in which some example embodiments are shown. In the drawings, the thickness of lines, layers and / or regions may be exaggerated for clarity.

[0014] Accordingly, the exemplary embodiments are capable of various modifications and alternative forms, embodiments of which are shown in the drawings by way of example and will be described in detail herein. It should be understood, however, that there is no intention to limit example embodiments to the particular forms disclosed, but on the contrary, example embodiments are to cover all modifications, equivalents, and alternatives falling within the scope of the disclosure. Throughout the description of the figures, the same reference numerals refer to the same or similar elements.

[0015] It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly co...

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Abstract

A method for forming a semiconductor device includes forming a plurality of non-semiconductor material portions at a first side of a semiconductor substrate; forming semiconductor material on the plurality of non-semiconductor material portions to bury the plurality of non-semiconductor material portions within semiconductor material; removing at least a portion of the semiconductor substrate from a second side of the semiconductor substrate to uncover the plurality of non-semiconductor material portions at a backside of the semiconductor device; and forming a rough surface at the backside of the semiconductor device by removing at least a subset of the plurality of non-semiconductor material portions while at least a part of a semiconductor material located laterally between the plurality of non-semiconductor material portions remains or by removing at least a part of a semiconductor material located laterally between the plurality of non-semiconductor material portions while the plurality of non-semiconductor material portions remain.

Description

technical field [0001] Embodiments of the present invention relate to concepts for backside contacts for semiconductor devices, and more particularly to methods for forming semiconductor devices and semiconductor devices. Background technique [0002] For example, vertical power technologies such as power MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) require good adhesion at the backside. A non-optimized attachment in mass production can mean lower yields due to metal lift-off or even over-stress in electric fields. Contents of the invention [0003] It may be desirable to provide improved concepts for semiconductor devices that may allow for increased manufacturing yields and / or reduced numbers of defective devices. [0004] Such a requirement may be met by the subject matter of the claims. [0005] Some embodiments relate to methods for forming semiconductor devices. The method includes: forming a plurality of non-semiconductor material portions at a fi...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L21/28H01L29/41H01L29/78
CPCH01L29/401H01L29/41H01L29/66666H01L29/7827H01L29/0657H01L24/05H01L2224/04026H01L2224/05559H01L2224/291H01L2224/32225H01L2224/32245H01L2224/05572H01L2924/014H01L21/0242H01L21/76898H01L23/481H01L23/495H01L23/482
Inventor 奥利弗·黑尔蒙德彼得·伊尔西格勒塞巴斯蒂安·施密特汉斯-约阿希姆·舒尔策马丁纳·赛德尔-施密特
Owner INFINEON TECH AG
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