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Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, and pattern formation method

A composition and lower-layer technology, applied in photosensitive material processing, photosensitive materials used in photomechanical equipment, optics, etc., can solve the problems of resolution resist pattern collapse and difficulty in obtaining it, and achieve excellent heat resistance and etching resistance excellent effect

Inactive Publication Date: 2018-01-02
MITSUBISHI GAS CHEM CO INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as the miniaturization of the resist pattern progresses, there will be a problem of resolution and a problem of the collapse of the resist pattern after development, so the thinning of the resist is required
However, it is difficult to obtain a sufficient film thickness of the resist pattern in substrate processing only by thinning the resist

Method used

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  • Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, and pattern formation method
  • Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, and pattern formation method
  • Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, and pattern formation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0259] Hereinafter, the present invention will be described in further detail through synthesis examples and examples, but the present invention is not limited by these examples.

[0260] [Measurement of Carbon Concentration and Oxygen Concentration]

[0261] Carbon concentration and oxygen concentration (mass %) were measured by organic elemental analysis.

[0262] Device: CHN CODER MT-6 (manufactured by Yanako Analytical Industry Co., Ltd.)

[0263] [Measurement of weight average molecular weight]

[0264] The polystyrene-equivalent weight average molecular weight (Mw) was calculated|required by gel permeation chromatography (GPC) analysis.

[0265] Device: Shodex GPC-101 (manufactured by Showa Denko Co., Ltd.)

[0266] Column: KF-80M×3

[0267] Eluent: THF 1ml / min

[0268] Temperature: 40°C

[0269] [Measurement of Solubility]

[0270] The amount of the compound dissolved in propylene glycol monomethyl ether acetate (PGMEA) was measured at 23°C, and the results were ...

Synthetic example 1

[0273] Synthesis of cyanate ester compound of phenol-modified xylene formaldehyde resin (hereinafter also abbreviated as "GP100CN")

[0274] (Synthesis of Phenol Modified Xylene Formaldehyde Resin)

[0275] 800 g (8.5 mol) of phenol and 0.43 g of p-toluenesulfonic acid as a catalyst were added, the temperature was raised with stirring, and 670 g of xylene formaldehyde resin (Nikanol G manufactured by Fudow Co., Ltd.) was added dropwise at a liquid temperature of 130° C. over 1 hour. During the dropwise addition, the reflux temperature decreased from 150°C to 105°C. The reaction was completed in 1 hour after the dropwise addition. After the reaction, steam distillation was performed at 170° C. for 2.5 hours in order to remove phenols. Then, 1700 g of methyl isobutyl ketone was slowly added and diluted while cooling. Next, the diluted reaction solution was repeatedly washed three times with 850 g of warm water at 70 to 80°C. Next, solvent removal and distillation removal of...

manufacture example 1

[0284] A four-neck flask with an internal volume of 10 L capable of discharging from the bottom, equipped with a Dimro cooling tube, a thermometer, and a stirring blade, was prepared. 1.09 kg (7 moles, manufactured by Mitsubishi Gas Chemical Co., Ltd.) of 1,5-dimethylnaphthalene and 2.1 kg of 40% by mass formalin aqueous solution (28 moles as formaldehyde, Mitsubishi Gas Chemical Co., Ltd.) and 0.97 mL of 98% by mass sulfuric acid (Kanto Chemical Co., Ltd.) were reacted under normal pressure at 100° C. for 7 hours while refluxing. Thereafter, 1.8 kg of ethylbenzene (special grade reagent manufactured by Wako Pure Chemical Industries, Ltd.) was added to the reaction liquid as a diluting solvent, and after standing still, the lower aqueous phase was removed. Furthermore, neutralization and water washing were performed, ethylbenzene and unreacted 1, 5- dimethyl naphthalene were distilled off under reduced pressure, and 1.25 kg of dimethyl naphthalene formaldehyde resins were obta...

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Abstract

Provided are: a material for forming an underlayer film for lithography, said material including a cyanate ester compound obtained by cyanating a modified xylene formaldehyde resin; a composition including said material; and a pattern formation method which uses said composition.

Description

technical field [0001] The present invention relates to a material for forming an underlayer film for lithography, a composition for forming an underlayer film for lithography containing the material, an underlayer film for lithography formed using the composition, and a pattern forming method (resist) using the composition pattern method or circuit pattern method). Background technique [0002] In the manufacture of semiconductor devices, microfabrication is performed by photolithography using photoresist materials. In recent years, with higher integration and higher speed of LSIs, further miniaturization according to pattern rules is required. However, photolithography using exposure, which is currently a general-purpose technology, is approaching the limit of the inherent resolution derived from the wavelength of the light source. [0003] The light source for lithography used when forming a resist pattern has a shorter wavelength from a KrF excimer laser (248 nm) to an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/11C08G73/06G03F7/26
CPCG03F7/26C08G8/28C08G10/04C08G73/0644C08G73/0655G03F7/11C08G73/06G03F7/094H01L21/0273H01L21/0271
Inventor 冈田佳奈牧野嶋高史越后雅敏东原豪大越笃
Owner MITSUBISHI GAS CHEM CO INC
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