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Method for manufacturing silicon carbide semiconductor device, method for manufacturing semiconductor base, the silicon carbide semiconductor device, and device for manufacturing the silicon carbide semiconductor device

一种制造方法、碳化硅的技术，应用在半导体/固态器件制造、半导体器件、半导体/固态器件零部件等方向，能够解决碳化硅晶片翘曲等问题，达到减小翘曲的效果

Active Publication Date: 2018-01-02
SHINDENGEN ELECTRIC MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

On the other hand, making SiC wafers thinner sometimes warps

Method used

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  • Method for manufacturing silicon carbide semiconductor device, method for manufacturing semiconductor base, the silicon carbide semiconductor device, and device for manufacturing the silicon carbide semiconductor device
  • Method for manufacturing silicon carbide semiconductor device, method for manufacturing semiconductor base, the silicon carbide semiconductor device, and device for manufacturing the silicon carbide semiconductor device
  • Method for manufacturing silicon carbide semiconductor device, method for manufacturing semiconductor base, the silicon carbide semiconductor device, and device for manufacturing the silicon carbide semiconductor device

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Experimental program
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no. 1 approach

[0059] constitute

[0060] The method of manufacturing a silicon carbide semiconductor device in this embodiment mode is as follows: figure 1 As shown, it includes the step of forming a surface electrode 30 made of metal or the like on the surface side of the silicon carbide wafer 10 (surface electrode forming step S15, refer to Figure 4 (b)), and a step of thinning the silicon carbide wafer 10 from the back side to thin the silicon carbide wafer 10 (thinning step S16 ). Figure 4 Silicon carbide wafer 10 prepared in (a) has, for example, silicon carbide substrate 11 , and silicon carbide layer 12 formed on silicon carbide substrate 11 due to, for example, heteroepitaxial growth.

[0061] like figure 1 As shown, the method of manufacturing silicon carbide semiconductor device 100 includes a step of forming carbide layer 20 (carbide layer forming step S20 ). The carbide layer forming step S20 is as figure 2 As shown, it includes the step of providing the metal layer 21 on t...

no. 2 approach

[0091] Next, a second embodiment of the present invention will be described.

[0092] In the first embodiment, the external force applied in the carbide layer forming step S20 is the suction force from the vacuum suction unit 270 . On the other hand, the form in the second embodiment is as follows Figure 11 The shown external force applied in the carbide layer forming step S20 is the pressing force from the pressing portion 290 formed by a member through which laser light passes. In this embodiment, although the form in which the pressing part 290 is used instead of the vacuum suction part 270 will be described, it is not limited thereto, and the pressing part 290 may be used together with the vacuum suction part 270 .

[0093] The pressing portion 290 in this embodiment may be formed of a material that transmits laser light. The pressing part 290 may be in the form of pressing almost the entire silicon carbide wafer 10 , or may be in the form of pressing only a part of the...

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Abstract

A method for manufacturing a silicon carbide semiconductor device (100) comprises: a step for forming a front-surface electrode (30) on a front surface side of a silicon carbide wafer (10); a step forthinning the silicon carbide wafer (10) by reducing a thickness of the silicon carbide wafer (10) from a back surface side thereof; a step for providing a metal layer (21) on the back surface of thethinned silicon carbide wafer (10); a step for irradiating the metal layer (21) with laser light, while applying an external force such that the silicon carbide wafer and the metal layer are planarized, to form the carbide layer (20) obtained by a reaction with carbon in the silicon carbide wafer (10), on a back surface side of the metal layer (21); and a step for forming a back-surface electrode(40) on a back surface side of the carbide layer (20).

Description

technical field [0001] The invention relates to a method for manufacturing a silicon carbide semiconductor device, a method for manufacturing a semiconductor substrate, a silicon carbide semiconductor device, and a manufacturing device for a silicon carbide semiconductor device. Background technique [0002] In the past, attempts have been made to make silicon carbide wafers (wafers) thinner in order to make silicon carbide semiconductor devices thinner. To make the silicon carbide wafer thinner, for example, grinding can be used. On the other hand, thinning SiC wafers sometimes causes warpage. As a means of solving such a warpage problem, for example, WO2012 / 049792 (paragraph [0038]) proposes the following. (1) After thinning, a Ni (nickel) film is formed on the back surface, and a silicide (Silicide) layer is formed by performing laser annealing on the Ni film. (2) Thinning the substrate (wafer) in this way causes great warpage, but at least a part of the process-altere...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/28
CPCH01L21/0485H01L21/268H01L23/544H01L29/1608H01L2223/54426H01L21/02057H01L21/02529H01L21/28512H01L21/561H01L21/78H01L23/3171H01L29/0619
Inventor 福田祐介渡部善之
Owner SHINDENGEN ELECTRIC MFG CO LTD