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Antimony selenide thin film solar cell and method for preparing same

A technology of solar cells and antimony selenide, which is applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems of destroying the quality of heterojunctions, hindering the improvement of efficiency, and decreasing the stability of devices, so as to improve the stability of devices and improve Effect of stability, high dielectric constant

Inactive Publication Date: 2018-01-12
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] At present, rapid thermal evaporation (RTE) is commonly used to deposit antimony selenide thin films. The battery structure is Glass / FTO or ITO / CdS / antimony selenide / Au, but there are serious ions at the CdS / antimony selenide interface of this type of battery. Diffusion, such as Cd ions diffuse into the antimony selenide layer to form an N-type layer to make a homojunction, and introduce a 0.22eV donor energy level, which destroys the quality of the heterojunction, causing the stability of the device to decline , is also a major obstacle to the improvement of efficiency

Method used

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  • Antimony selenide thin film solar cell and method for preparing same
  • Antimony selenide thin film solar cell and method for preparing same
  • Antimony selenide thin film solar cell and method for preparing same

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Embodiment 1

[0037] Please refer to figure 2 , the antimony selenide thin film solar cell of the present embodiment is glass substrate, ITO layer, CdS layer, ZrO 2 layer, antimony selenide light-absorbing active layer, gold electrode. Its preparation method is as follows:

[0038] (1) A transparent conductive oxide layer is fabricated on the upper surface of the glass substrate, and an ITO layer is used in this embodiment. Then use the ultrasonic cleaning method to ultrasonically clean the glass substrate with the ITO layer at a heating temperature of 20-50°C according to the following steps, each step is 30 minutes: detergent + deionized water, acetone, isopropanol, ethanol, deionized ionized water. After cleaning, blow dry with nitrogen.

[0039] (2) Depositing a cadmium sulfide (CdS) film as an N-type layer by using a chemical water bath deposition method. The temperature of the water bath is 68.5°C, first put 220ml of deionized water into a 500ml beaker and stir to preheat to 68....

Embodiment 2

[0049] Please refer to Figure 5 , the antimony selenide thin film solar cell of the present embodiment is glass substrate, FTO layer, ZnO layer, SiO 2 layer, antimony selenide light-absorbing active layer, gold electrode. Its preparation method is as follows:

[0050] (1) Fabricate a transparent conductive oxide layer on the upper surface of the glass substrate, and this embodiment uses an FTO layer. Ultrasonic cleaning method is used to ultrasonically clean the glass substrate with FTO layer according to the following steps, each step is 30min, and the heating temperature is 20-50°C: detergent + deionized water, acetone, isopropanol, ethanol, deionized water. After cleaning, blow dry with nitrogen.

[0051] (2) Deposit a layer of ZnO buffer layer as an N-type layer on the transparent conductive film by spraying thermal decomposition method, the raw material is preferably zinc acetate, and the decomposition temperature is preferably 500 degrees Celsius.

[0052] (3) Using...

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Abstract

The invention belongs to the field of photoelectron materials and devices, and discloses an antimony selenide thin film solar cell on the basis of an interfacial barrier layer. The antimony selenide thin film solar cell comprises a glass substrate, a transparent conductive oxide layer, an N-type layer, the interfacial barrier layer, an antimony selenide light absorption active layer and an electrode which are sequentially arrayed from bottom to top. The interfacial barrier layer is an Al2O3 layer or a ZrO2 layer or a SiO2 layer. The invention further discloses a method for preparing the antimony selenide thin film solar cell. The method includes depositing ZrO2 or Al2O3 or SiO2 thin films with the thicknesses of 0.1-2 nm at PN junction interfaces by the aid of atomic layer deposition technologies. The antimony selenide thin film solar cell and the method have the advantages that thin film materials have high dielectric constants, accordingly, diffusion of ions between the antimony selenide active layer and the N-type electron collecting layer can be stopped, the quality of heterojunctions and the stability of devices can be improved, the problem of diffusion of ions of heterojunction interfaces of existing antimony selenide thin film solar cells with one-dimensional chain structures can be solved, and the stability of the antimony selenide thin film solar cell can be obviouslyimproved.

Description

technical field [0001] The invention belongs to the field of optoelectronic materials and devices, and more specifically relates to an antimony selenide thin-film solar cell based on an interface barrier layer and a preparation method thereof. Background technique [0002] In recent years, thin-film solar cells have shown a trend of vigorous development due to their advantages such as simple preparation process and outstanding flexibility, especially compound semiconductor thin-film cells, which are the center of photovoltaic technology research. At present, the mainstream compound semiconductor thin-film solar cells mainly include copper indium gallium selenide (CIGS) and cadmium telluride (CdTe) thin-film solar cells. ), and the preparation process is complicated, so the wide range of applications is limited, and the further improvement of the efficiency is also very slow. And the three-dimensional structure of these materials leads to the discontinuity of the grain bound...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/06H01L31/18
CPCY02E10/50Y02P70/50
Inventor 唐江张军李登兵牛广达
Owner HUAZHONG UNIV OF SCI & TECH