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Narrow-linewidth semiconductor outer cavity laser device with flexible wavelength and control method

A semiconductor, narrow linewidth technology, applied in the field of optical communication, can solve the problems of grating being easily affected by environmental factors, difficulty in controlling peak reflection wavelength precision, and increase in the type and quantity of backup materials, so as to achieve easy batch production and reduce process realization. Difficulty, the effect of reducing production costs

Inactive Publication Date: 2018-01-19
GUANGXUN SCI & TECH WUHAN
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For example, the patent 20100303121A1 "Achieving low phase noise in external cavity laser implemented using planarlightwave circuit technology" of RIO Corporation of the United States discloses a low-noise external cavity laser that uses a silicon Bragg-based planar waveguide grating and a semiconductor gain chip to directly butt-couple. Coupling is difficult, and the insertion loss of external cavity coupling is large
Each ITU-T grid wavelength output laser needs to customize the Bragg silicon-based planar waveguide grating corresponding to the peak reflection wavelength. The manufacturing process of the waveguide grating is complicated and the cost is high.
For each wavelength of laser, a Lager silicon-based planar waveguide grating must be backed up, which leads to an increase in the type and quantity of back-up materials and an increase in cost
Another narrow-linewidth laser uses fiber Bragg gratings as hypotenuse negative feedback elements, such as the US patent US8018982B2 "Sliced ​​fiber bragggrating used as external cavity for semiconductor laser and solid statelaser", this laser structure proposes a packaging method for fiber Bragg gratings The grating is easily affected by environmental factors, which is not conducive to the stable output of the laser; the production of lasers with different wavelength outputs also requires the customization of fiber Bragg gratings with different peak reflection wavelengths, and the precision control of peak reflection wavelengths in the fiber grating manufacturing process have a certain degree of difficulty

Method used

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  • Narrow-linewidth semiconductor outer cavity laser device with flexible wavelength and control method
  • Narrow-linewidth semiconductor outer cavity laser device with flexible wavelength and control method
  • Narrow-linewidth semiconductor outer cavity laser device with flexible wavelength and control method

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Embodiment

[0043] see figure 1 As shown, a low-cost narrow-linewidth semiconductor external cavity laser with flexible wavelength in the example of the present invention includes a photodetector 1, a reflective semiconductor gain chip 2 (RSOA: Reflective Semiconductor Optical Amplifier), a collimating lens 3, and a fixed grid Lattice filter 4, Littrow type reflective grating 5, optical isolator 6, output coupling lens 7 and output optical fiber 8. Wherein, the reflective semiconductor gain chip 2 is used to provide gain, and its two ends are respectively coated with a high reflection film and an anti-reflection film. The photodetector 1 is arranged on the side of the reflective semiconductor gain chip 2 coated with a high reflective film, and can detect the power of the laser. A collimator lens 3, a fixed grid filter 4, and a Littrow type reflective grating 5 are sequentially arranged on the side of the reflective semiconductor gain chip coated with an anti-reflection film.

[0044]A r...

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Abstract

The invention relates to a semiconductor outer cavity laser device and a control method, in particular to a narrow-linewidth semiconductor outer cavity laser device with flexible wavelength and a control method, and belongs to the technical field of optical communication. The laser device and the control method have the advantages that two frequently-used optical frequency selectors are combined into an ultra-narrow filter serving as a frequency selection element for an outer cavity, and accordingly, long-term single-frequency operation of the narrow-linewidth laser device is guaranteed; the angle of incidence of each optical frequency selector is adjusted, and accordingly, flexible wavelength output can be realized.

Description

technical field [0001] The invention relates to a semiconductor external cavity laser and a control method, belonging to the technical field of optical communication, in particular to a flexible wavelength narrow linewidth semiconductor external cavity laser and a controller. Background technique [0002] Low-noise narrow-linewidth laser sources have important and extensive applications in coherent optical communications, coherent lidar, high-precision optical fiber sensing, gravitational wave detection, microwave photonics and other fields. The current domestic market has long been monopolized by foreign products, and the product prices To a certain extent, it restricts the industrialization and marketization of scientific and technological achievements in related fields. Most of the output wavelengths of various narrow-linewidth laser sources that can be seen on the market adopt the ITU-T grid standard. There are three main schemes: narrow-linewidth solid-state lasers base...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/14
Inventor 汤学胜翟宇佳李迪陈宏刚
Owner GUANGXUN SCI & TECH WUHAN