Narrow-linewidth semiconductor outer cavity laser device with flexible wavelength and control method
A semiconductor, narrow linewidth technology, applied in the field of optical communication, can solve the problems of grating being easily affected by environmental factors, difficulty in controlling peak reflection wavelength precision, and increase in the type and quantity of backup materials, so as to achieve easy batch production and reduce process realization. Difficulty, the effect of reducing production costs
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[0043] see figure 1 As shown, a low-cost narrow-linewidth semiconductor external cavity laser with flexible wavelength in the example of the present invention includes a photodetector 1, a reflective semiconductor gain chip 2 (RSOA: Reflective Semiconductor Optical Amplifier), a collimating lens 3, and a fixed grid Lattice filter 4, Littrow type reflective grating 5, optical isolator 6, output coupling lens 7 and output optical fiber 8. Wherein, the reflective semiconductor gain chip 2 is used to provide gain, and its two ends are respectively coated with a high reflection film and an anti-reflection film. The photodetector 1 is arranged on the side of the reflective semiconductor gain chip 2 coated with a high reflective film, and can detect the power of the laser. A collimator lens 3, a fixed grid filter 4, and a Littrow type reflective grating 5 are sequentially arranged on the side of the reflective semiconductor gain chip coated with an anti-reflection film.
[0044]A r...
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