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Silicon core for reducing furnace and reducing furnace

A reduction furnace and silicon core technology, applied in the direction of silicon compounds, inorganic chemistry, non-metallic elements, etc., can solve the problems of high cost and low deposition efficiency, and achieve the effect of solving high cost and shortening operation cycle.

Inactive Publication Date: 2018-02-09
ASIA SILICON QINGHAI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention aims to provide a silicon core for a reduction furnace to solve the problems of high cost and low deposition efficiency in the reduction furnace in the prior art

Method used

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  • Silicon core for reducing furnace and reducing furnace
  • Silicon core for reducing furnace and reducing furnace
  • Silicon core for reducing furnace and reducing furnace

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] figure 1 It is a schematic diagram of the overall structure of the silicon core 10 for a reduction furnace provided in Example 1 of the present invention at a first viewing angle, figure 2 It is a schematic diagram of the overall structure of the silicon core 10 for a reduction furnace provided in Example 1 of the present invention under a second viewing angle. Please refer to figure 1 and combine figure 2 , the present embodiment provides a silicon core 10 for a reduction furnace, which includes two silicon core bodies 100, the silicon core body 100 is provided with a first end 110 and a second end 120 opposite thereto; the outer peripheral wall of the silicon core body 100 At least three protrusions 130 or grooves 140 are provided, and the protrusions 130 or grooves 140 extend from the first end 110 to the second end 120 . The first connecting piece 200 is connected to the first end 110 . It is used to connect to the second connecting piece 300 at the bottom of ...

Embodiment 2

[0056] Figure 5 It is a schematic diagram of the overall structure of the silicon core 10 for a reduction furnace provided in Example 2 of the present invention at a first viewing angle, Image 6 It is a schematic diagram of the overall structure of the silicon core 10 for a reduction furnace provided in Example 2 of the present invention under a second viewing angle. Please refer to Figure 5 and combine Image 6 , in this embodiment, the groove 140 is configured as a rectangle. Setting the groove 140 as a rectangle facilitates processing, simplifies the work difficulty of the operator, and saves labor costs.

[0057] It should be noted that in this embodiment, the groove 140 is set in a rectangular shape, which facilitates processing, simplifies the work difficulty of the operator, and saves labor costs. It can be understood that in other specific embodiments, the groove 140 can also be set in other shapes according to user's requirements.

[0058] In summary, the sili...

Embodiment 3

[0060] The embodiment of the present invention also provides a reduction furnace, which includes the above-mentioned silicon core 10 for the reduction furnace; the silicon core 10 for the reduction furnace is arranged in the reduction furnace body. The reduction furnace is connected inside the bottom of the reduction furnace with the second connecting piece 300 of the silicon core 10 .

[0061] In this embodiment, the second connecting member 300 is configured as a cylinder. During implementation, the second connecting piece 300 is set in a cylindrical shape, so that the second connecting piece 300 is clamped in the clamping piece at the bottom of the reduction furnace.

[0062] It should be noted that, in this embodiment, during implementation, the second connecting piece 300 is set in a cylindrical shape, so that the second connecting piece 300 is clamped in the clamping piece at the bottom of the reduction furnace. It can be understood that the shape of the second connecti...

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Abstract

The invention relates to the field of polycrystalline silicon production, and discloses a silicon core for a reducing furnace and the reducing furnace. The silicon core for the reducing furnace provided by the invention comprises two silicon core bodies, wherein at least three bulges or grooves are formed in the outer circumferential wall of each silicon core body; the bulges or the grooves extendfrom a first end to a second end. Each silicon core body comprises at least three bulges or grooves, so that the outer circumferential surface area of the silicon core for the reducing furnace is increased, and thus increase in the deposition speed, reduction in the energy consumption and improvement on the silicon quality are facilitated; first connecting components are connected with the firstends, so that connection with a cross beam is facilitated and the stability of the silicon core is improved; second connecting components connected with the bottom of the reducing furnace are connected with the second ends, and through arrangement of the second connecting components and in combination with the shapes of the silicon core bodies, guarantee of the stability of the silicon core is facilitated and thus occurrence of a furnace falling phenomenon caused by infirm supporting of the silicon core is avoided. The reducing furnace provided by the invention comprises the silicon core for the reducing furnace, so that the reducing furnace also has the former beneficial effects.

Description

technical field [0001] The invention relates to the field of polysilicon production, in particular to a silicon core for a reduction furnace and a reduction furnace. Background technique [0002] my country's polysilicon enterprises mainly use the Siemens method for production. As the deposition carrier in the production process, a large number of silicon cores are required in the production. The surface area of ​​the silicon core plays a vital role in the deposition speed and energy consumption, and the deposition speed of silicon rods and the carrier The surface area of ​​the carrier is related to the surface area of ​​the carrier. The surface area of ​​the carrier starts from the initial surface area of ​​the silicon core. As the reaction time increases, the deposited silicon rod becomes thicker and thicker, the surface area of ​​the carrier becomes larger, and the reaction gas has more chances to collide with the deposition area. The speed is also increased accordingly, so...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/035
CPCC01B33/035
Inventor 宗冰张宝顺王体虎
Owner ASIA SILICON QINGHAI