Forming method of doped region, thin film transistor and manufacturing method thereof

Abstract

The invention discloses a method for forming a doped region, a thin film transistor and a method for fabricating the same. The method for forming the doped region includes the steps of coating a firstphotoresist on a substrate; performing a photomask on the first photoresist to form a first ion-doped region, and implanting ions having a first energy value into the first ion-doped region; removinga second photoresist to form a third photoresist; and etching the third photoresist to form a second ion-doped region, and implanting ions having a second energy value into the second ion-doped region, wherein the first energy value is higher than the second energy value. Through the above method, the process steps are reduced, the complexity of the process is reduced, and therefore the production efficiency and the product quality are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for forming a doped region, a thin film transistor and a manufacturing method thereof. Background technique [0002] At present, thin-film transistors are widely used in liquid crystal displays as driving components. Generally speaking, thin-film transistors include a gate insulating layer, a gate, a source, a drain, an oxide semiconductor film layer, and a passivation layer. Among them, the source and drain are separated by a trench. By controlling the gate voltage, the source and drain can be in a conduction (on) or insulation (off) state, and this switching characteristic is used to drive the on-off of different pixel regions in the liquid crystal display. [0003] Low Temperature Poly-silicon Thin Film Transistor (LTPS TFT, Low Temperature Poly-silicon Thin Film Transistor) has the characteristics of low power consumption, low electromagnetic interference and...

AI Technical Summary

Problems solved by technology

[0004] At present, in the prior art, on the one hand, the MASK (photomask) preparation method is mainly used, and the length of the ion buffer zone is defined by two photoresists. Accuracy is susceptible to Mask alignment offset

On the other hand, the preparation method of GE Re-etch (Gate Electrode Re-etch, gate electrode etching) is mainly used, and the length of the ion buffer is defined by one mask and two GE Etches. This method can save one mask, but Metal etching has high requirements on equipment, and the dimensional accuracy of the ion buffer is difficult to control, and the technology is difficult

Images