Manufacturing method of oled display and oled display

Abstract

The invention provides a method for manufacturing an OLED display and the OLED display. The manufacturing method of the OLED display is to form an anti-reflection layer on the anode layer of the TFT substrate, and then apply a negative photoresist material on the anti-reflection layer and the TFT substrate, and then expose and develop the negative photoresist material to form pixels The definition layer, due to the existence of the anti-reflection layer, can effectively prevent the exposure light for exposing the negative photoresist material from being reflected by the anode layer to the pixel area Photoresist residues are generated in the pixel area on the corresponding negative photoresist material, so that the film thickness of the OLED light-emitting layer fabricated subsequently in the pixel area is uniform, and the display quality of the OLED display is improved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a method for manufacturing an OLED display and the OLED display. Background technique [0002] Organic Light Emitting Display (OLED) has self-illumination, low driving voltage, high luminous efficiency, short response time, high definition and contrast, nearly 180° viewing angle, wide operating temperature range, and can realize flexible display and With many advantages such as large-area full-color display, it is recognized by the industry as a display device with the most potential for development. [0003] According to the driving method, OLED can be divided into two categories: passive matrix OLED (Passive Matrix OLED, PMOLED) and active matrix OLED (Active Matrix OLED, AMOLED), namely direct addressing and thin film transistor (TFT) matrix addressing. kind. Among them, AMOLED has pixels arranged in an array, belongs to the active display type, has high luminous efficiency...

AI Technical Summary

Problems solved by technology

[0005] Existing OLED displays are generally divided into two types: bottom emission (Bottom Emission) and top emission (Top Emission). The anode adopts a structure of two layers of indium tin oxide sandwiching a layer of silver (ITO / Ag / ITO). Due to the characteristics of silver, the anode of the top-emitting OLED display is reflective. At the same time, the anode surface of this structure is relatively rough. Please refer to figure 1 and figure 2 , is a schematic diagram of an existing method for manufacturing an OLED display with a top-emitting structure. First, an anode 200' with a structure of two layers of indium tin oxide sandwiched by a layer of silver is formed on the base substrate 100', and an anode 200' is formed on the anode 200'. layer negative photoresist material 500', and then use a photomask 400' to expose and develop the negative photoresist material 500', thereby forming a pixel definition layer 300' having a plurality of openings 310' for defining pixel regions. When exposing the negative photoresist material 500', the exposure light is only irradiated to the area of ​​the negative photoresist material 500' other than the area 510' where openings are to be formed. However, due to the rough surface of the anode 200' and its reflective properties, The exposure light will be reflected by the anode 200' into the area 510' where the opening is to be formed, exposing part of the negative photoresist in the area 510' where the opening is to be formed so that it cannot be removed in the subsequent developing process, so that the The remaining photoresist in the opening 310' will affect the uniformity and spreadability of the OLED light-emitting material printed or evaporated in the opening 310', resulting in dark spots or varying degrees of brightness unevenness after the OLED display is lit ( mura), affecting display quality

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