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Gas injectors and film formation devices used in semiconductor processes

A technology of gas injector and film forming device, which is applied in semiconductor/solid-state device manufacturing, metal material coating process, electrical components, etc., and can solve problems affecting thin film process, gas channel pollution, gas residue, etc.

Active Publication Date: 2022-01-07
HERMES EPITEK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The above-mentioned gas channel The outlet end (the far right end) of the gas will cause back flow due to the turbulent flow of the gas, so that the unreacted process gas remains in the gas injector 14, which will cause pollution of the gas flow channel, thereby affecting the subsequent formation of the film craft

Method used

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  • Gas injectors and film formation devices used in semiconductor processes
  • Gas injectors and film formation devices used in semiconductor processes
  • Gas injectors and film formation devices used in semiconductor processes

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Embodiment Construction

[0058] Various embodiments for carrying out the present invention will be described below. Please refer to the attached drawings and refer to their corresponding descriptions. In addition, in this specification and drawings, the same code|symbol is attached|subjected to the structure which is substantially the same or the same, and the repeated description is abbreviate|omitted.

[0059] figure 2 It is a schematic cross-sectional view of a reaction chamber of a film forming device according to an embodiment of the present application. As shown in the figure, the reaction chamber 20 is used as an example of a III / V compound semiconductor film forming device. The reaction chamber 20 includes a susceptor 22 , a member 23 facing the susceptor 22 , a gas injector 24 , and a gas exhaust unit 25 . The substrate W is carried by the substrate holding member 221 , and the backside of the substrate W (the surface without circuits) is heated by the vapor chamber 222 , and the substrat...

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Abstract

A gas injector and film forming device used in semiconductor process, wherein the gas injector includes multiple gas inlets, multiple gas flow channels and multiple gas outlets. The multiple gas inlets introduce multiple gases, and deliver them to the corresponding gas outlets through the multiple gas flow channels. A cross-sectional area of ​​a portion of at least one of the plurality of gas flow channels gradually changes relative to the gas outlet.

Description

technical field [0001] The present invention relates to a gas-phase film-forming device for forming a thin film on a semiconductor substrate, and in detail, relates to a gas injector in a film-forming device used in a semiconductor process. Background technique [0002] In the process of forming a thin film on a semiconductor substrate, a gas injector is used to horizontally (or vertically) spray the gas supplied by the gas source to the substrate on the susceptor for mixing in the reaction chamber of the film forming device to accommodate the substrate, and then use A physical or chemical reaction induced by heat to deposit a thin film on a substrate such as a wafer. The gas injector must be designed so that the gas source gas is ejected horizontally and evenly distributed on the surface of the rotating substrate, so as to generate a uniform boundary layer on the surface of the substrate to facilitate the deposition of thin films. In addition, the distance and inclination ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/455H01L21/02
CPCC23C16/45563H01L21/02104C23C16/45576C23C16/4584C23C16/22C23C16/448C23C16/45548C23F1/12F28F13/003H01L21/02312H01L21/306
Inventor 薛士雍
Owner HERMES EPITEK