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No buried block rf power amplifier

A technology of power amplifiers and components, applied in the direction of amplifiers, radio frequency amplifiers, amplifier types, etc., can solve problems such as redundant costs, unsatisfactory electrical connection quality, and changes

Active Publication Date: 2021-06-01
TELEFON AB LM ERICSSON (PUBL)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Buried blocks complicate PCB fabrication due to the added or repeated process steps required to make them and create cavity plating for RF connections to the PCB ground plane
Added or repeated process steps increase PCB manufacturing cost, lengthen PCB manufacturing cycle time, and impact new product time-to-market (TTM) for frequency band variations
In addition, the quality of the electrical connection is not ideal
Manufacturing variations in PA placement and the quality of PA to buried block attachment alter PA performance, adversely affecting manufacturing yield
[0009] Current PA solutions are technically contradictory; adequate PA performance is achieved if PCB buried blocks are used, but PCB fabrication is difficult, lengthy and costly
PCB fabrication is standard, fast, and cost-effective without the use of PCB burying blocks, but PA performance is insufficient

Method used

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  • No buried block rf power amplifier
  • No buried block rf power amplifier
  • No buried block rf power amplifier

Examples

Experimental program
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Embodiment Construction

[0028] Before describing in detail exemplary embodiments according to the present disclosure, it should be noted that the embodiments reside primarily in combinations of device components and process steps related to coinless RF power amplifiers. Accordingly, system and method components, where appropriate, have been represented by conventional symbols in the drawings such that only those specific details are shown that are relevant to the understanding of the embodiments of the present disclosure, in order not to obscure the facts of the present invention to those of ordinary skill in the art having the benefit of the description herein. The disclosure is obscured by details that are easily understood.

[0029] As used herein, relative terms such as "first" and "second", "top" and "bottom", etc. may only be used to distinguish one entity or element from another entity or element, and do not necessarily require or imply any physical or logical relationship or sequence between ...

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PUM

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Abstract

Power amplifier assemblies and components are disclosed. According to some embodiments, there is provided a power amplifier assembly (10) comprising a power amplifier (12) having a gate lead (14) with a gate contact surface, a drain with a drain contact surface A lead (13), and a source contact surface (15) having a length and a width. Extended heat sinks (11) are mounted against the source contact surface to conduct heat away from the (18) surface and extend the electrical path of the source. The extended heat sink has at least a length greater than the length of the source contact surface.

Description

technical field [0001] The present disclosure relates to power amplifiers, and more particularly to the installation of power amplifiers. Background technique [0002] RF and other high frequency (HF) power amplifiers (PAs) are a type of semiconductor amplifier used to convert a low power RF signal into a larger RF signal of high power, typically for driving the antenna of a transmitter. A PA consists of one or more power transistors mounted within a semiconductor package to form a PA module. In this specification, the PA module will simply be referred to as PA. PA transistors increase the power of the output signal (drain) by taking energy from the supply (source) and controlling the output to match the input signal shape (gate) but with larger amplitude. PA output power ranges from less than one watt to several hundred watts. Methods are used to integrate localized heat removal systems, such as incorporating cooling elements onto HF circuit boards. Such localized heat ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H05K1/02H05K3/32H03F3/213H03F3/195H03F1/30H01L23/66H05K3/34
CPCH01L23/66H03F1/30H03F3/195H03F3/213H05K1/0203H05K1/0243H05K3/325H01L2223/6644H03F2200/451H05K3/3405H05K2201/10386H05K2201/10446H05K2201/1034H05K2201/10166H05K2201/10818H05K2201/10628H05K2201/10689H05K2201/10969
Inventor R.斯姆普森R.内林格M.劳亚布希
Owner TELEFON AB LM ERICSSON (PUBL)