Ingaas material, MOS device based on ingaas material as channel and preparation method thereof
A device and channel technology, applied in the field of MOS devices and its preparation, can solve the problems of inability to obtain high-quality InGaAs, large Si lattice mismatch, and expensive Ge substrates, etc.
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Embodiment 1
[0126] See figure 1 , figure 1 A process flow chart of an InGaAs material provided by an embodiment of the present invention. The method comprises the steps of:
[0127] Step a, select Si substrate;
[0128] Step b. growing a first Ge seed layer on the surface of the Ge substrate at a first temperature;
[0129] Step c. growing a second Ge host layer on the surface of the first Ge seed layer at a second temperature;
[0130] Step d, heating the entire substrate, and using a laser process to crystallize the entire substrate, the parameters of the laser process include: the laser wavelength is 808nm, the laser spot size is 10mm×1mm, and the laser power is 1.5kW / cm 2 , the laser moving speed is 25mm / s;
[0131] Step e, cooling to form the Ge / Si dummy substrate material;
[0132] Step f, growing InGaAs material on the surface of the Ge / Si dummy substrate material.
[0133] Wherein, in step b and step c, the first temperature is lower than the second temperature. Further, t...
Embodiment 2
[0157] See Figure 4a-Figure 4e , Figure 4a-Figure 4eThe process schematic diagram of an InGaAs material provided by the embodiment of the present invention, on the basis of the above embodiments, this embodiment will introduce the process flow of the InGaAs material of the present invention in more detail. The method includes:
[0158] S101. Substrate selection. Such as Figure 4a As shown, a monocrystalline silicon (Si) substrate sheet 001 with a certain thickness is selected as the initial material;
[0159] S102 , growing an epitaxial layer. Such as Figure 4b As shown, the first Ge seed layer with a thickness of 40-50nm was epitaxially grown on the Si substrate by chemical vapor deposition at 275°C~325°C; Epitaxially growing a second Ge host layer 002 with a thickness of 150-250 nm on the layer;
[0160] S103. Preparation of a protective layer. Such as Figure 4c As shown, 150nm silicon dioxide (SiO2) was deposited on the surface by chemical vapor deposition (CV...
Embodiment 3
[0165] See Figure 5a-Figure 5t , Figure 5a-Figure 5t A process schematic diagram of an NMOS device based on an InGaAs material as a channel provided for an embodiment of the present invention. On the basis of the above-mentioned embodiments, this embodiment will describe in more detail the process of an NMOS device based on an InGaAs material as a channel in the present invention. The process flow is introduced. The method includes:
[0166] S101, such as Figure 5a , select a single crystal Si substrate 101;
[0167] S102, such as Figure 5b , at a temperature of 275°C to 325°C, using a CVD process to grow a 50nm first Ge seed layer 102 on the described;
[0168] S103, such as Figure 5c , at a temperature of 500°C to 600°C, a CVD process is used to grow a 150nm second Ge host layer 102 on the surface of the first Ge seed layer (it should be noted that the first Ge is The seed crystal layer and the second Ge main body layer are combined into one layer, and the overal...
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Abstract
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