Preparation method of high refractive index hydrogenated silicon film, high refractive index hydrogenated silicon film, filter stack and filter

Abstract

The invention discloses a preparation method of a high refractive index hydrogenated silicon film, a high refractive index hydrogenated silicon film, a filter stack and a filter, and relates to the technical field of optical films. This includes the following steps: (a) deposit Si on the substrate through magnetron Si target sputtering to form a silicon film; (b) the silicon film forms an oxygen-containing hydrogenated silicon film in an environment containing active hydrogen and active oxygen. The amount of oxygen accounts for 4 to 99% of the total amount of active hydrogen and active oxygen, or the silicon film forms a nitrogen-containing hydrogenated silicon film in an environment containing active hydrogen and active nitrogen, and the amount of active nitrogen accounts for the total amount of active hydrogen and active nitrogen. 5~20% of the quantity. The present invention separates sputtering and reaction. First, Si is deposited on the substrate through magnetron Si target sputtering, and then the plasma of active hydrogen and active oxygen / nitrogen reacts with silicon to obtain oxygen- or nitrogen-containing SiH. The problem of target poisoning is avoided, and the SiH film has a higher refractive index and lower absorption.

Description

technical field [0001] The invention relates to the technical field of optical thin films, in particular to a method for preparing a high-refractive-index hydrogenated silicon film, a high-refractive-index hydrogenated silicon film, a filter stack and an optical filter. Background technique [0002] Silicon hydrogenated thin films have attracted much attention due to their wide application prospects in microelectronic devices such as infrared imaging sensors, solar cells and thin film transistors. The preparation process of silicon hydride is mainly divided into chemical deposition methods, such as plasma enhanced chemical vapor deposition, etc.; physical deposition methods, such as radio frequency sputtering. [0003] In near-infrared imaging systems such as 3D, a narrow-band bandpass filter is used, which requires that even if the light is incident at a large angle, the offset of its central wavelength with the angle should be as small as possible, so as to ensure a wider ...

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Problems solved by technology

However, this technology adopts the principle of reactive sputtering, and there may be "poisoning" of the target material, that is, the target material is easily polluted by hydrogen gas, resulting in unstable production and other problems.

[0005] In order to produce a filter with low polarization effect, it is difficult for general sputtering equipment to prepare silicon hydrogenated silicon with a high refractive index of more than 2.5 and an extinction coefficient lower than 0.0005, and complex and special coating equipment must be used

However, the production efficiency of the coating machine made by the existing technology is low, which causes the cost of a single chip to remain high.

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