An Insulated Gate Bipolar Transistor Device Structure with Semi-closed Primitive Cell

Abstract

An insulated gate bipolar transistor device structure with a semi-closed cell, the top of which includes two types of trenches: an active trench and a dummy trench; the active trench and the dummy trench form a semi-closed structure; the active trench There is a gap between the virtual trench and the virtual trench; all trenches penetrate at least part of the CS layer to the N-drift layer and extend for a distance in the part of the N-drift layer; above the CS layer is a P-type base region; P-type An N+ emitter region and a P+ contact region are also arranged on the base region, and are connected to the emitter electrode through a contact window.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and relates to a MOS (Metal-Oxide-Semiconductor, metal oxide semiconductor) gate-controlled bipolar device, in particular to an insulated gate bipolar transistor (IGBT). Background technique [0002] MOS gate-controlled bipolar devices not only have high power, but also can be controlled with small signals. There are various IGBT structure designs, trench-FS (trench gate-field stop) structure is the most common result. The strip-shaped primitive cell structure is more common in the trench gate structure. There are also closed primitive cell structures: such as square primitive cells, hexagonal primitive cells, and so on. [0003] A typical IGBT structure with a closed cell is as figure 1 shown. The structure includes: a metal collector 13 on the back, a P-type collector 12 , an N-type field stop layer 11 and an N-drift region 10 . The trench gate structure is composed of ...

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Problems solved by technology

However, the gate capacitance of this structure is relatively large

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