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Wafer processing method and polishing apparatus

A processing method and wafer technology, applied in the direction of grinding equipment, grinding machine tools, grinding tools, etc., can solve problems such as wafer erosion, and achieve the effect of improving productivity

Active Publication Date: 2018-04-10
DISCO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, even if the polishing is completed according to the value consistent with the design, since the polishing pad containing the polishing liquid is in contact with the wafer, the design value may be exceeded and the wafer may be eroded

Method used

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  • Wafer processing method and polishing apparatus
  • Wafer processing method and polishing apparatus
  • Wafer processing method and polishing apparatus

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Experimental program
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Effect test

Embodiment approach 1

[0030] The wafer processing method according to Embodiment 1 of the present invention will be described with reference to the drawings. figure 1 It is a perspective view showing a wafer to be processed in the wafer processing method according to the first embodiment. figure 2 It is a perspective view of a configuration example of a grinding and polishing apparatus used in the wafer processing method of the first embodiment. image 3 is showing figure 2 A perspective view of a structural example of a grinding member of the grinding and grinding device shown.

[0031] The method of processing the wafer of Embodiment 1 is to form a removal layer G on the back surface WR of the wafer W and divide the wafer W into device chips DT (in figure 1 shown in dotted line) method. Such as figure 1 As shown, the wafer W is a disc-shaped semiconductor wafer or optical device wafer made of silicon. On the front surface WS of the wafer W, devices DV are formed in regions defined by a plu...

Embodiment approach 2

[0062] A wafer processing method according to Embodiment 2 of the present invention will be described with reference to the drawings. Figure 10 It is a figure showing the strain layer removal process of the wafer processing method of Embodiment 2. Figure 11 It is a figure which shows the polishing liquid removal process of the wafer processing method of Embodiment 2. Figure 12 It is a figure which shows the removal layer formation process of the wafer processing method of Embodiment 2. exist Figure 10 to Figure 12 In the description, the same reference numerals are assigned to the same parts as those in Embodiment 1, and description thereof will be omitted.

[0063] The wafer processing method of Embodiment 2 (hereinafter, simply referred to as the processing method) is different from Embodiment 1 in the structure of the polishing member 5 performing the strain layer removal step ST4, the polishing liquid removal step ST5, and the removal layer formation step ST6. All a...

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PUM

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Abstract

The present invention is to provide a wafer processing method and a polishing apparatus that can be changed to a gettering layer formation at a rapid rate after polishing and can be processed into a wafer as designed. A wafer processing method is a method of forming a gettering layer on a back surface of a wafer by using a polishing pad, comprising a wafer holding step (ST1) of holding a BG tape adhered to a surface of a wafer on a chuck table, a strain layer removing step (ST4) for removing the strain layer from the back surface of the wafer while rotating the polishing pad and the chuck table while supplying the rinsing liquid, an abrasive liquid removing step (ST5) for removing the remaining abrasive liquid from the nozzle toward the polishing pad by supplying the rinsing liquid after the execution of the strain layer removing step (ST4), and a gettering layer forming step (ST6) for forming a gettering layer on the back surface of the wafer while rotating the polishing pad and the chuck table while supplying the polishing pad and the wafer with a non-abrasive liquid.

Description

technical field [0001] The invention relates to a wafer processing method and a grinding device. Background technique [0002] In the manufacturing process of an electronic device, a plurality of regions are divided on the front surface of a substantially disk-shaped silicon substrate or the like by dividing lines called streets arranged in a grid pattern, and ICs ( Integrated Circuit: integrated circuit), LSI (Large-Scale Integration: large-scale integrated circuit) and other devices. Individual devices are formed by dividing the wafer formed with a plurality of devices in this way along the lanes. In order to achieve miniaturization and weight reduction of the device, the back surface of the wafer is usually ground to a predetermined thickness before the wafer is cut along the lanes to divide into individual regions. [0003] When the back surface of the wafer as described above is ground, a grinding strain layer of about 1 μm composed of microcracks is formed on the bac...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/11B24B37/27B24B37/34B24B57/02
CPCB24B37/11B24B37/27B24B37/345B24B57/02B24B37/005B24B37/04H01L21/02016H01L21/304H01L21/31051H01L21/78
Inventor 宫城有佑
Owner DISCO CORP