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back-illuminated image sensor

An image sensor, back-illuminated technology, applied in semiconductor devices, electric solid-state devices, radiation control devices, etc.

Active Publication Date: 2022-03-25
STMICROELECTRONICS (CROLLES 2) SAS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These structures further have various manufacturing and implementation issues

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Embodiment Construction

[0022] In the various figures, the same elements have been assigned the same reference numerals and, furthermore, the various figures are not drawn to scale. For the sake of clarity, only those steps and elements that are useful for understanding the described embodiments have been shown and described in detail. In particular, conductive interconnects and elements such as transistors and photodiodes are not shown.

[0023] In the following description, where reference is made to terms limiting absolute position (eg, terms "left", "right", etc.) or relative positions (eg, terms "upper", "lower", etc.), reference is made to the relevant figures in the corresponding drawings. the orientation of the element. Unless otherwise specified, the expression "about" means within 10%, preferably within 5%.

[0024] Figure 1 to Figure 9 is a simplified cross-sectional view illustrating an embodiment of a backside illuminated image sensor in sequential steps of manufacturing the backside...

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Abstract

The present disclosure relates to a back-illuminated image sensor comprising memory regions formed in a semiconductor wafer, each memory region located between two opaque walls extending into the wafer and arranged in contact with the Opaque screen contacts at the back surface of the memory area.

Description

[0001] This application claims the benefit of priority from French Patent Application No. 16 / 59700, filed on October 7, 2016, the contents of which are hereby incorporated by reference in their entirety to the fullest extent permitted by law. technical field [0002] The present disclosure relates to semiconductor devices, and more particularly to backside illuminated image sensors. Background technique [0003] Image sensors include pixel arrays formed from semiconductor wafers. Charges are generated in each pixel according to light received during acquisition, and the amount of generated charges is read during readout. In some image sensors, pixels are associated with memory regions where the generated charge is periodically transferred for later reading. [0004] The problem is that light can reach the memory region between the transfer time and the read time and generate electron / hole pairs in it. This modifies the amount of stored charge, which reduces image quality. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L27/1464H01L27/14683H01L27/14609H01L27/14623H01L27/14629H01L27/1463H01L27/14687H01L27/1462H01L27/14636H01L27/14685H01L27/14698
Inventor D·贝努瓦O·欣西格E·格维斯特
Owner STMICROELECTRONICS (CROLLES 2) SAS