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Display equipment, display substrate and fabrication method of display substrate

A technology for displaying substrates and manufacturing methods, applied in semiconductor/solid-state device manufacturing, electrical components, transistors, etc., can solve problems affecting production efficiency and achieve the effect of reducing photolithography processes

Active Publication Date: 2018-04-27
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention mainly provides a display device, a display substrate and a manufacturing method thereof, so as to solve the problem in the prior art that a layer of metal etching stopper layer (i.e., protective layer) is first formed on the semiconductor active layer, and then the metal for source and drain electrodes is deposited. layer, which in turn affects production efficiency

Method used

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  • Display equipment, display substrate and fabrication method of display substrate
  • Display equipment, display substrate and fabrication method of display substrate
  • Display equipment, display substrate and fabrication method of display substrate

Examples

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Embodiment 1

[0021] see figure 1 and figure 2 , figure 1 It is a schematic diagram of a partial cross-sectional structure of the display substrate 100 of this embodiment, figure 2 is a top view of an implementation manner of the display substrate 100 of this embodiment, wherein figure 1 for figure 2 The front view after cutting from the A-B tangent in , figure 2 The gate line 30 is connected to the gate 11, the data line 40 is connected to the source 17, the pixel electrode 20 is connected to the drain 18, and the source 17 and the drain 18 are separated by a passivation layer 19.

[0022] A display substrate 100 provided in an embodiment of the present invention includes:

[0023] The gate 11 and the gate insulating layer 12 arranged on one side of the base substrate 10, the semiconductor active layer (not marked) arranged on the gate insulating layer 12, the semiconductor active layer includes first The semiconductor oxide layer 13 and the second semiconductor oxide layer 14 , ...

Embodiment 2

[0036] see image 3 and figure 1 , image 3 is a partial cross-sectional structural schematic diagram of an embodiment of the display device of the present invention, figure 1 It is a schematic diagram of a partial cross-sectional structure of an embodiment of the display substrate 100 of the present invention. from image 3It can be seen that the display device of this embodiment includes the display substrate 100 described in Embodiment 1, and a corresponding driving circuit 200 is disposed on the display substrate 100 . Since the display substrate 100 has been described in detail in the first embodiment, it will not be repeated here.

[0037] In the display substrate 100 of the present invention, a semiconductor active layer composed of a first semiconductor oxide layer 13 and a second semiconductor oxide layer 14 stacked on one side of the base substrate 10 is sequentially arranged, and the first semiconductor oxide layer 13 The electrical conductivity of the second s...

Embodiment 3

[0041] see figure 1 , Figure 4 , Figure 5 , Image 6 and Figure 7 , figure 1 It is a schematic diagram of a partial cross-sectional structure after forming a passivation layer 19 and a pixel electrode 20 layer in an embodiment of the manufacturing method of the display substrate 100 of this embodiment, Figure 4 It is a flow chart of some implementation steps of an embodiment of the manufacturing method of the display substrate 100 in this embodiment, Figure 5 It is a schematic diagram of a partial cross-sectional structure after forming the first etch stop layer 15 and the second etch stop layer 16 in an embodiment of the manufacturing method of the display substrate 100 of this embodiment, Image 6 It is a schematic diagram of a partial cross-sectional structure after forming the first semiconductor oxide layer 13 and the second semiconductor oxide layer 14 in an embodiment of the manufacturing method of the display substrate 100 of this embodiment, Figure 7 It is...

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Abstract

The invention discloses display equipment, a display substrate and a fabrication method of the display substrate. The display substrate comprises a semiconductor active layer, wherein the semiconductor active layer comprises a first semiconductor oxide layer and a second semiconductor oxide layer, the first semiconductor oxide layer is arranged between the second semiconductor oxide layer and a substrate, the electrical conductivity of the first semiconductor layer is lower than that of the second semiconductor layer, and the first semiconductor oxide layer can be prevented from being damagedby the second semiconductor oxide layer during etching a source-drain metal layer. By the display substrate, a photoetching process in one time can be reduced, and the semiconductor active layer cannot be damaged during etching the source-drain metal layer.

Description

technical field [0001] The invention relates to the field of liquid crystal displays, in particular to a display device, a display substrate and a manufacturing method thereof. Background technique [0002] Thin Film Transistor Liquid Crystal Display (TFT-LCD for short) has the characteristics of small size, low power consumption, and no radiation, and occupies a dominant position in the current flat panel display market. In recent years, TFT-LCD has achieved rapid development, especially the development of LCD TV is more rapid, its size and resolution continue to improve, large-size, high-resolution LCD TV has become a mainstream of TFT-LCD development. At present, the largest LCD TV in the world has exceeded 100 inches. With the continuous increase of TFTL-LCD size and resolution, in order to improve the display quality, a higher frequency drive circuit is used, and the delay of the image signal becomes more serious, and the signal delay becomes a constraint for large siz...

Claims

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Application Information

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IPC IPC(8): H01L27/12H01L29/786H01L21/77H01L21/336
CPCH01L27/1225H01L27/127H01L29/66742H01L29/78693
Inventor 刘翔
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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