Combination of patterned metal wire and substrate
A technology of composition and compound, which is applied in the direction of metal pattern materials, removal of conductive materials by chemical/electrolytic methods, semiconductor devices, etc., can solve the problems of unstable etchant, reduce the opening ratio of display device pixel areas, etc., and achieve improved Effects of opening ratio, productivity improvement, and foundation thickness reduction
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[0027] Hereinafter, an etchant composition, a metal wire formed using the etchant composition, and a method of manufacturing a display substrate using the etchant composition will be described in detail with reference to the accompanying drawings.
[0028] etchant composition
[0029] An etchant composition according to an exemplary embodiment includes phosphoric acid (H 3 PO 4 ), nitric acid (HNO 3 ), acetic acid (CH 3 COOH), copper ion compound (Cu-X), nitrate (Y-NO 3 ), acetate (Z-CH 3 CO 2 ), and the rest of the deionized water. The etchant composition may further include fluorometallic acid. Hereinafter, each component of the etchant composition will be described in further detail.
[0030] phosphoric acid
[0031] The phosphoric acid component of the etchant composition can react with copper to etch the copper-based conductive layer. For example, phosphoric acid can oxidize copper according to the following reaction:
[0032] 3Cu+2H 3 PO 4 → Cu 3 (PO 4...
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