Substrate dry etching apparatus

Abstract

The invention relates to a substrate dry etching apparatus. The substrate dry etching apparatus comprises an upper electrode plate, a lower electrode plate and a plurality of supporting bumps; the upper electrode plate and the lower electrode plate are arranged oppositely at intervals; a plurality of movable holes and a plurality of air holes are formed in the lower electrode plate; each air holeruns through the two opposite surfaces of the lower electrode plate; each movable hole is formed in the surface, towards the upper electrode plate, of the lower electrode plate; each supporting bump is movably inserted in each movable hole; the movable holes are the same in width and section shapes; each support bump props against the side wall of the corresponding movable hole; and each supporting bump is protruded on the surface of the lower electrode plate with the same height. By adjusting the protruding height of the supporting bumps on the surface of the lower electrode plate, the supporting bump with the highest protruding height can prop against an idle region on the big plate, and a condition that the supporting bump props against a pixel region on the big plate can be avoided, thereby avoiding generation of poor spots in the etching process of the substrate and achieving a better substrate etching effect.

Description

technical field [0001] The invention relates to the technical field of organic light-emitting display manufacturing, in particular to a substrate dry etching device. Background technique [0002] Dry etching (Dry Etching) is a technology for etching thin films with plasma, which is widely used in semiconductor technology, thin film transistor liquid crystal display and OLED (Organic Light-Emitting Diode, Organic Light-Emitting Diode) display manufacturing technology. During the manufacturing process of an organic light emitting diode LTPS (Low Temperature Poly-silicon, low temperature polysilicon) array substrate, dry etching is usually used to remove the film on the surface of the substrate to form the desired circuit pattern. During the dry etching process, the high-frequency voltage partially ionizes the reactive gas into plasma, and an electric field is formed between the upper electrode and the lower electrode that cooperate with each other. Etching is performed. [0...

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Problems solved by technology

[0004] However, the cooling effect is different at the position where the support protrusion is in contact with the substrate compared with other positions on the substrate that are not in contact with the support protrusion, and defective spots (mura) are likely to occur at the position where the support protrusion contacts the lower surface of the substrate , causing defects in the substrate

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